EPD of reverse micelle Pd and Pt nanoparticles onto InP and GaN for high-response hydrogen sensors

Key Engineering Materials

Volumn 507, Issue , 2012, Pages 169-173

  Zdansky, Karel ^a   Yatskiv, Roman ^a   Cernohorsky, Ondrej ^a,b   Piksova, Katerina ^b  

^a INSTITUTE OF PHOTONICS AND ELECTRONICS   (Czech Republic)

^b CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

Author keywords

Electrophoresis; GaN; Hydrogen Sensor; InP; Metal Nanoparticles; Schottky Barrier

Indexed keywords

COLLOIDAL GRAPHITE; DEPOSITS; ELECTROPHORESIS; GALLIUM NITRIDE; HYDROGEN; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; MICELLES; OHMIC CONTACTS; PALLADIUM; PLATINUM; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DIODES; SILICON WAFERS; SINGLE CRYSTALS; SOLS; WIDE BAND GAP SEMICONDUCTORS;

FERMI LEVEL PINNING; GALLIUM NITRIDES (GAN); HYDROGEN SENSOR; NANOPARTICLE (NPS); RECTIFICATION RATIO; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SCHOTTKY-MOTT LIMITS;

METAL NANOPARTICLES;

EID: 84859089860     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/KEM.507.169     Document Type: Conference Paper

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