Analytical delay model considering variability effects in subthreshold domain

IEEE Transactions on Circuits and Systems II: Express Briefs

Volumn 59, Issue 3, 2012, Pages 168-172

  Frustaci, Fabio ^a   Corsonello, Pasquale ^a   Perri, Stefania ^a  

^a UNIVERSITY OF CALABRIA   (Italy)

Author keywords

Analytical model; propagation delay; subthreshold complementary metal oxide semiconductor (CMOS); variability

Indexed keywords

CMOS INTEGRATED CIRCUITS; DELAY CIRCUITS; ENERGY CONSERVATION; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; THRESHOLD VOLTAGE; TRANSISTORS;

ACCURATE DELAY MODELS; ADVANCED PROCESS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; PROCESS VARIABILITY; PROPAGATION DELAYS; SUPPLY VOLTAGES; ULTRA-LOW-POWER CIRCUITS; VARIABILITY;

ANALYTICAL MODELS;

EID: 84859004097     PISSN: 15497747     EISSN: 15583791     Source Type: Journal    
DOI: 10.1109/TCSII.2012.2184377     Document Type: Article

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