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Applied Physics Letters

Volumn 99, Issue 3, 2011, Pages

High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy

(6) Gacevic Z a Fernandez Garrido S a,d Rebled, J M b,e Estrade S b,c Peiro F b Calleja, E a

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

b UNIVERSITY OF BARCELONA (Spain)

c TEM MAT (Spain)

d PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

e INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CRYSTALLINE QUALITY; DARK FIELD; HIGH QUALITY; IN-PLANE; INDIUM CONTENT; LATTICE-MATCHED; OPTICAL MEASUREMENT; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; PLASMON ENERGY; RESIDUAL ABSORPTION; SINGLE LAYER; SPATIAL RESOLUTION;

ATOMIC FORCE MICROSCOPY; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; EPITAXIAL GROWTH; GALLIUM NITRIDE; INDIUM; MOLECULAR BEAM EPITAXY; OPTICAL DATA PROCESSING; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

MOLECULAR BEAMS;

EID: 79960818152 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3614434 Document Type: Article

Times cited : (31)

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