Anomalous electron mobility in Extremely-Thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×1018cm-3

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Kadotani, Naotoshi ^a   Takahashi, Tsunaki ^a   Chen, Kunro ^a   Kodera, Tetsuo ^a   Oda, Shunri ^a   Uchida, Ken ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AS DOPING; COULOMB POTENTIAL; DIFFUSION LAYERS; DOPING CONCENTRATION; HEAVILY DOPED; POTENTIAL FLUCTUATIONS; RANDOMLY DISTRIBUTED; SILICON ON INSULATOR; SOI THICKNESS; THIN SOI;

DIFFUSION; ELECTRIC FIELDS; ELECTRON DEVICES; ELECTRON MOBILITY; ELECTRONS; SILICON;

DOPING (ADDITIVES);

EID: 79951831256     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703288     Document Type: Conference Paper

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