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Volumn 99, Issue 26, 2011, Pages

Ultraviolet/orange bicolor electroluminescence from an n-ZnO/n-GaN isotype heterojunction light emitting diode

(12) Huang, Huihui a Fang, Guojia a Li, Songzhan a,b Long, Hao a Mo, Xiaoming a Wang, Haoning a Li, Yuan c Jiang, Qike a Carroll, David L c Wang, Jianbo a Wang, Mingjun a Zhao, Xingzhong a

a WUHAN UNIVERSITY (China)

b WUHAN TEXTILE UNIVERSITY (China)

c WAKE FOREST UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GOOD STABILITY; INTERFACIAL LAYER; ISOTYPE HETEROJUNCTIONS; LUMINESCENCE PROPERTIES; MATERIAL PROPERTY; ORANGE EMISSIONS; REVERSE BIAS; TIME DEPENDENCE; ULTRA-VIOLET; ULTRAVIOLET EMISSION;

DIODES; ELECTROLUMINESCENCE; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT; LUMINESCENCE;

LIGHT EMITTING DIODES;

EID: 84858663720 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3672051 Document Type: Article

Times cited : (29)

References (22)

1
- 2542422532
- 10.1063/1.118824
- D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, and T. Goto, Appl. Phys. Lett. 70, 2230 (1997). 10.1063/1.118824
- (1997) Appl. Phys. Lett. , vol.70 , pp. 2230
- Bagnall, D.M.¹ Chen, Y.F.² Zhu, Z.³ Yao, T.⁴ Koyama, S.⁵ Shen, M.Y.⁶ Goto, T.⁷

2
- 0001424613
- Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices
- DOI 10.1063/1.121830, PII S0003695198012297
- R. D. Vispute, V. Talyansky, S. Choopun, R. P. Sharma, T. Venkatesan, M. He, X. Tang, J. B. Halpern, M. G. Spencer, Y. X. Li, Appl. Phys. Lett. 73, 348 (1998). 10.1063/1.121830 (Pubitemid 128673774)
- (1998) Applied Physics Letters , vol.73 , Issue.3 , pp. 348-350
- Vispute, R.D.¹ Talyansky, V.² Choopun, S.³ Sharma, R.P.⁴ Venkatesan, T.⁵ He, M.⁶ Tang, X.⁷ Halpern, J.B.⁸ Spencer, M.G.⁹ Li, Y.X.¹⁰ Salamanca-Riba, L.G.¹¹ Iliadis, A.A.¹² Jones, K.A.¹³

3
- 0035932264
- Recent advances in ZnO materials and devices
- DOI 10.1016/S0921-5107(00)00604-8, PII S0921510700006048
- D. C. Look, Mater. Sci. Eng., B 80, 383 (2001). 10.1016/S0921-5107(00) 00604-8 (Pubitemid 32331341)
- (2001) Materials Science and Engineering B: Solid-State Materials for Advanced Technology , vol.80 , Issue.1-3 , pp. 383-387
- Look, D.C.¹

4
- 4544341344
- 10.1016/j.sse.2004.05.063
- Y. I. Alivov, D. C. Look, B. M. Ataev, M. V. Chukichev, V. V. Mamedov, V. I. Zinenko, Y. A. Agafonov, and A. N. Pustovit, Solid-State Electron. 48, 2343 (2004). 10.1016/j.sse.2004.05.063
- (2004) Solid-State Electron. , vol.48 , pp. 2343
- Alivov, Y.I.¹ Look, D.C.² Ataev, B.M.³ Chukichev, M.V.⁴ Mamedov, V.V.⁵ Zinenko, V.I.⁶ Agafonov, Y.A.⁷ Pustovit, A.N.⁸

5
- 34648812805
- ZnO-based light-emitting metal-insulator-semiconductor diodes
- DOI 10.1063/1.2786603
- D. K. Hwang, M. S. Oh, J. H. Lim, Y. S. Choi, and S. J. Park, Appl. Phys. Lett. 91, 121113 (2007). 10.1063/1.2786603 (Pubitemid 47461859)
- (2007) Applied Physics Letters , vol.91 , Issue.12 , pp. 121113
- Hwang, D.-K.¹ Oh, M.-S.² Lim, J.-H.³ Choi, Y.-S.⁴ Park, S.-J.⁵

6
- 33748703127
- Fairly pure ultraviolet electroluminescence from ZnO-based light-emitting devices
- DOI 10.1063/1.2352722
- P. Chen, X. Ma, and D. Yang, Appl. Phys. Lett. 89, 111112 (2006). 10.1063/1.2352722 (Pubitemid 44396538)
- (2006) Applied Physics Letters , vol.89 , Issue.11 , pp. 111112
- Chen, P.¹ Ma, X.² Yang, D.³

7
- 72049105571
- 10.1109/LED.2009.2028904
- H. H. Huang, G. J. Fang, X. M. Mo, H. Long, L. Y. Yuan, B. Z. Dong, X. Q. Meng, and X. Z. Zhao, IEEE Electron Device Lett. 30, 1063 (2009). 10.1109/LED.2009.2028904
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 1063
- Huang, H.H.¹ Fang, G.J.² Mo, X.M.³ Long, H.⁴ Yuan, L.Y.⁵ Dong, B.Z.⁶ Meng, X.Q.⁷ Zhao, X.Z.⁸

8
- 77951583425
- 10.1002/adma.200903623
- H. Zhu, C. X. Shan, J. Y. Zhang, Z. Z. Zhang, B. H. Li, D. X. Zhao, B. Yao, D.Z. Shen, X. W. Fan, Z. K. Tang, Adv. Mater. 22, 1877 (2010). 10.1002/adma.200903623
- (2010) Adv. Mater. , vol.22 , pp. 1877
- Zhu, H.¹ Shan, C.X.² Zhang, J.Y.³ Zhang, Z.Z.⁴ Li, B.H.⁵ Zhao, D.X.⁶ Yao, B.⁷ Shen, D.Z.⁸ Fan, X.W.⁹ Tang, Z.K.¹⁰

9
- 0142167493
- 10.1063/1.1615308
- Y. I. Alivov, J. E. V. Nostrand, D. C. Look, M. V. Chukichev, and B. M. Ataev, Appl. Phys. Lett. 83, 2943 (2003). 10.1063/1.1615308
- (2003) Appl. Phys. Lett. , vol.83 , pp. 2943
- Alivov, Y.I.¹ Nostrand, J.E.V.² Look, D.C.³ Chukichev, M.V.⁴ Ataev, B.M.⁵

10
- 1042289088
- 10.1002/adma.v16:1
- W. Park and G. C. Yi, Adv. Mater. 16, 87 (2004). 10.1002/adma.v16:1
- (2004) Adv. Mater. , vol.16 , pp. 87
- Park, W.¹ Yi, G.C.²

11
- 33846842237
- Characteristics of ZnO/GaN heterostructure formed on GaN substrate by sputtering deposition of ZnO
- DOI 10.1016/j.mseb.2006.10.014, PII S0921510706006556
- S. Lee and D. Y. Kim, Mater. Sci. Eng., B 137, 80 (2007). 10.1016/j.mseb.2006.10.014 (Pubitemid 46205196)
- (2007) Materials Science and Engineering B: Solid-State Materials for Advanced Technology , vol.137 , Issue.1-3 , pp. 80-84
- Lee, S.¹ Kim, D.Y.²

12
- 59649106319
- 10.1016/j.mseb.2008.12.004
- S. H. Hwang, T. H. Chung, and B. T. Lee, Mater. Sci. Eng., B 157, 32 (2009). 10.1016/j.mseb.2008.12.004
- (2009) Mater. Sci. Eng., B , vol.157 , pp. 32
- Hwang, S.H.¹ Chung, T.H.² Lee, B.T.³

13
- 77949456784
- 10.1109/JQE.2009.2025250
- C. Hsing-Chao, C. Miin-Jang, W. Mong-Kai, L. Wei-Chih, T. Hung-Ling, Y. Jer-Ren, K. Hon, and M. Shiojiri, IEEE J. Quantum Electron. 46, 265 (2010). 10.1109/JQE.2009.2025250
- (2010) IEEE J. Quantum Electron. , vol.46 , pp. 265
- Hsing-Chao, C.¹ Miin-Jang, C.² Mong-Kai, W.³ Wei-Chih, L.⁴ Hung-Ling, T.⁵ Jer-Ren, Y.⁶ Hon, K.⁷ Shiojiri, M.⁸

14
- 67651121622
- 10.1002/adma.200802686
- X. M. Zhang, M. Y. Lu, Y. Zhang, L. J. Chen, and Z. L. Wang, Adv. Mater. 21, 2767 (2009). 10.1002/adma.200802686
- (2009) Adv. Mater. , vol.21 , pp. 2767
- Zhang, X.M.¹ Lu, M.Y.² Zhang, Y.³ Chen, L.J.⁴ Wang, Z.L.⁵

15
- 77954928637
- 10.1002/adma.201000611
- O. Lupan, T. Pauport, and B. Viana, Adv. Mater. 22, 3298 (2010). 10.1002/adma.201000611
- (2010) Adv. Mater. , vol.22 , pp. 3298
- Lupan, O.¹ Pauport, T.² Viana, B.³

16
- 78149443576
- 10.1002/adma.201002134
- S. Xu, C. Xu, Y. Liu, Y. Hu, R. Yang, Q. Yang, J. H. Ryou, H. J. Kim, Z. Lochner, S. Choi, Adv. Mater. 22, 4749 (2010). 10.1002/adma.201002134
- (2010) Adv. Mater. , vol.22 , pp. 4749
- Xu, S.¹ Xu, C.² Liu, Y.³ Hu, Y.⁴ Yang, R.⁵ Yang, Q.⁶ Ryou, J.H.⁷ Kim, H.J.⁸ Lochner, Z.⁹ Choi, S.¹⁰

17
- 47249097879
- 10.1063/1.2957465
- S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, Appl. Phys. Lett. 93, 013506 (2008). 10.1063/1.2957465
- (2008) Appl. Phys. Lett. , vol.93 , pp. 013506
- Tan, S.T.¹ Sun, X.W.² Zhao, J.L.³ Iwan, S.⁴ Cen, Z.H.⁵ Chen, T.P.⁶ Ye, J.D.⁷ Lo, G.Q.⁸ Kwong, D.L.⁹ Teo, K.L.¹⁰

18
- 77952988674
- 10.1063/1.3431287
- S. Li, G. Fang, H. Long, X. Mo, H. Huang, B. Dong, and X. Zhao, Appl. Phys. Lett. 96, 201111 (2010). 10.1063/1.3431287
- (2010) Appl. Phys. Lett. , vol.96 , pp. 201111
- Li, S.¹ Fang, G.² Long, H.³ Mo, X.⁴ Huang, H.⁵ Dong, B.⁶ Zhao, X.⁷

19
- 0011250172
- 10.1063/1.1396829
- Y. E. Lee, D. P. Norton, J. D. Budai, and Y. Wei, J. Appl. Phys. 90, 3863 (2001). 10.1063/1.1396829
- (2001) J. Appl. Phys. , vol.90 , pp. 3863
- Lee, Y.E.¹ Norton, D.P.² Budai, J.D.³ Wei, Y.⁴

20
- 0030264903
- 10.1063/1.363443
- W. Grieshaber, E. F. Schubert, I. D. Goepfert, J. R. F. Karlicek, M. J. Schurman, and C. Tran, J. Appl. Phys. 80, 4615 (1996). 10.1063/1.363443
- (1996) J. Appl. Phys. , vol.80 , pp. 4615
- Grieshaber, W.¹ Schubert, E.F.² Goepfert, I.D.³ Karlicek, J.R.F.⁴ Schurman, M.J.⁵ Tran, C.⁶

21
- 0001628688
- 10.1063/1.119060
- A. Billeb, W. Grieshaber, D. Stocker, E. F. Schubert, and J. R. F. Karlicek, Appl. Phys. Lett. 70, 2790 (1997). 10.1063/1.119060
- (1997) Appl. Phys. Lett. , vol.70 , pp. 2790
- Billeb, A.¹ Grieshaber, W.² Stocker, D.³ Schubert, E.F.⁴ Karlicek, J.R.F.⁵

22
- 0003816232
- (Springer, Berlin)
- J. I. Pankove, Electroluminescence (Springer, Berlin, 1977), p. 159.
- (1977) Electroluminescence , pp. 159
- Pankove, J.I.¹

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