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Volumn 520, Issue 10, 2012, Pages 3774-3777
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Threshold voltage shift by controlling Ga in solution processed Si-In-Zn-O thin film transistors
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Author keywords
Chemical deposition from solution; Low temperature; Threshold voltage; Zinc oxide
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Indexed keywords
CHEMICAL DEPOSITION;
ELECTRICAL CHARACTERISTIC;
FIELD-EFFECT MOBILITIES;
LOW TEMPERATURES;
METAL CATION;
ON/OFF CURRENT RATIO;
SOLUTION-PROCESSED;
SUBTHRESHOLD SWING;
THIN-FILM TRANSISTOR (TFTS);
THRESHOLD VOLTAGE SHIFTS;
DEPOSITION;
ELECTRIC FIELD EFFECTS;
ELECTRIC PROPERTIES;
THIN FILM TRANSISTORS;
THIN FILMS;
THRESHOLD VOLTAGE;
VANADIUM;
VAPOR DEPOSITION;
ZINC OXIDE;
GALLIUM;
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EID: 84858334996
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2011.10.212 Document Type: Conference Paper |
Times cited : (8)
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References (16)
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