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Volumn 520, Issue 10, 2012, Pages 3774-3777

Threshold voltage shift by controlling Ga in solution processed Si-In-Zn-O thin film transistors

Author keywords

Chemical deposition from solution; Low temperature; Threshold voltage; Zinc oxide

Indexed keywords

CHEMICAL DEPOSITION; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; LOW TEMPERATURES; METAL CATION; ON/OFF CURRENT RATIO; SOLUTION-PROCESSED; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFTS); THRESHOLD VOLTAGE SHIFTS;

EID: 84858334996     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.212     Document Type: Conference Paper
Times cited : (8)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.