Correlated conductivity and work function changes in epitaxial graphene

Applied Physics Letters

Volumn 100, Issue 9, 2012, Pages

  Nomani, Md W K ^a   Shields, V ^b   Tompa, G ^c   Sbrockey, N ^c   Spencer, M G ^b   Webb, R A ^d   Koley, G ^a  

^a The Department of Mechanical Engineering   (United States)

^b School of Operations Research and Industrial Engineering   (United States)

^c STRUCTURED MATERIALS INDUSTRIES INC   (United States)

^d UNIVERSITY OF SOUTH CAROLINA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORBED MOLECULES; BOLTZMANN TRANSPORT THEORY; CHARGE INTERACTIONS; EPITAXIAL GRAPHENE; FEW-LAYER GRAPHENE; GRAPHENE BAND; MOLECULAR ADSORPTION; QUANTITATIVE MODELS; SENSING LAYERS; SIC SUBSTRATES; SURFACE WORK FUNCTIONS; WORK FUNCTION CHANGE;

ADSORPTION; EPITAXIAL GROWTH; SILICON CARBIDE; STATISTICAL MECHANICS; WORK FUNCTION;

GRAPHENE;

EID: 84857946236     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3691628     Document Type: Article

References (27)

1. A. K. Geim and K. S. Novoselov, Nature Mater. 6, 183 (2007). 10.1038/nmat1849
2. I. W. Frank, D. M. Tanenbaum, A. M. Van der Zande, and P. L. McEuen, J. Vac. Sci. Technol. B 25, 2558 (2007). 10.1116/1.2789446
3. A. A. Balandin, S. Ghosh, W. Z. Bao, I. Calizo, D. Teweldebrhan, F. Miao, and C. N. Lau, Nano Lett. 8, 902 (2008). 10.1021/nl0731872
4. K. I. Bolotin, K. J. Sikes, J. Hone, H. L. Stormer, and P. Kim, Phys. Rev. Lett. 101, 096802 (2008). 10.1103/PhysRevLett.101.096802
5. E. H. Hwang, S. Adam, and S. D. Sarma, Phys. Rev. Lett. 98, 186806 (2007). 10.1103/PhysRevLett.98.186806
6. F. Schedin, A. K. Geim, S. V. Morozov, E. W. Hill, P. Blake, M. I. Katsnelson, and K. S. Novoselov, Nature Mater. 6, 652 (2007). 10.1038/nmat1967
7. J. T. Robinson, F. K. Perkins, E. S. Snow, Z. Wei, and P. E. Sheehan, Nano Lett. 8, 3137 (2008). 10.1021/nl8013007
8. M. Foxe, G. Lopez, I. Childres, R. Jalilian, C. Roecker, J. Boguski, I. Jovanovic, and Y. P. Chen, IEEE Nuclear Science Symposium Conference, Orlando, FL, USA, October 25-31, 2009.
9. K. V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G. L. Kellogg, L. Ley, J. L. McChesney, T. Ohta, S. A. Reshanov, J. Röhrl, Nature Mater. 8, 203 (2009). 10.1038/nmat2382
10. S. Shivaraman, M. V. S. Chandrashekhar, J. Boeckl, and M. G. Spencer, J. Electron. Mater. 38, 725 (2009). 10.1007/s11664-009-0803-6
11. S. Shivaraman, R. A. Barton, X. Yu, J. Alden, L. Herman, M. V. S. Chandrashekhar, J. Park, P. L. McEuen, J. M. Parpia, H. G. Craighead, Nano Lett. 9, 3100 (2009). 10.1021/nl900479g
12. Md. W. K. Nomani, R. Shishir, M. Qazi, D. Diwan, V. B. Shields, M. G. Spencer, G. S. Tompa, N. M. Sbrockey, and G. Koley, Sens. Actuators B 150, 301 (2010). 10.1016/j.snb.2010.06.069
13. Y. Shi, K. K. Kim, A. Reina, M. Hofmann, L. J. Li, and J. Kong, ACS Nano 4, 2689 (2010). 10.1021/nn1005478
14. Y. J. Yu, Y. Zhao, S. Ryu, L. E. Brus, K. S. Kim, and P. Kim, Nano Lett. 9, 3430 (2009). 10.1021/nl901572a
15. N. J. Lee, J. W. Yoo, Y. J. Choi, C. J. Kang, D. Y. Jeon, D. C. Kim, S. Seo, and H. J. Chung, Appl. Phys. Lett. 95, 222107 (2009). 10.1063/1.3269597
16. M. Qazi, Md. W. K. Nomani, M. V. S. Chandrashekhar, G. Koley, V. B. Shields, and M. G. Spencer, Appl. Phys. Exp. 3, 075101 (2010). 10.1143/APEX.3.075101
17. O. Leenaerts, B. Partoens, and F. M. Peeters, Phys. Rev. B 77, 125416 (2008). 10.1103/PhysRevB.77.125416
18. G. Koley, M. Qazi, L. Lakshmanan, and T. Thundat, Appl. Phys. Lett. 90, 173105 (2007). 10.1063/1.2731686
19. M. Qazi, T. Vogt, and G. Koley, Appl. Phys. Lett. 91, 233101 (2007). 10.1063/1.2820387
20. Y. Lin, C. Dimitrakopoulos, D. B. Farmer, S. Han, Y. Wu, W. Zhu, D. K. Gaskill, J. L. Tedesco, R. L. Myers-Ward, C. R. Eddy, Jr., Appl. Phys. Lett. 97, 112107 (2010). 10.1063/1.3485671
21. Z. Chen, I. Santoso, R. Wang, L. F. Xie, H. Y. Mao, H. Huang, Y. Z. Wang, X. Y. Gao, Z. K. Chen, D. Ma, Appl. Phys. Lett. 96, 213104 (2010). 10.1063/1.3441263
22. S. Adam, E. H. Hwang, V. M. Galitski, and S. D. Sarma, Proc. Natl. Acad. Sci. U.S.A. 104, 18392 (2007). 10.1073/pnas.0704772104
23. C. Riedl, C. Coletti, and U. Starke, J. Phys. D: Appl. Phys. 43, 374009 (2010). 10.1088/0022-3727/43/37/374009
24. H. Geistlinger, I. Eisele, B. Flietner, and R. Winterb, Sens. Actuators B 34, 499 (1996). 10.1016/S0925-4005(96)01926-0
25. Y. H. Zhang, Y. B. Chen, K. G. Zhou, C. H. Liu, J. Zeng, H. L. Zhang, and Y. Peng, Nanotechnology 20, 185504 (2009). 10.1088/0957-4484/20/18/185504
26. T. O. Wehling, K. S. Novoselov, S. V. Morozov, E. E. Vdovin, M. I. Katsnelson, A. K. Geim, and A. I. Lichtenstein, Nano Lett. 8, 173 (2008). 10.1021/nl072364w
27. W. Chen, S. Chen, Z. Hua Ni, H. Huang, D. Chen Qi, X. Yu Gao, Z. Xiang Shen, and A. Thye Shen Wee, Jpn. J. Appl. Phys. 49, 01AH05 (2010). 10.1143/JJAP.49.01AH05