Dipole- and charge transfer contributions to the work function change of semiconducting thin films: Experiment and theory

Sensors and Actuators, B: Chemical

Volumn 34, Issue 1-3, 1996, Pages 499-505

  Geistlinger, H ^a   Eisele, I ^b   Flietner, B ^c   Winter, R ^b  

^a HELMHOLTZ CENTRE FOR ENVIRONMENTAL RESEARCH UFZ   (Germany)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^c IBM   (United States)

Author keywords

Charge transfer; Dipole; Semiconducting thin films

Indexed keywords

EID: 0043046797     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(96)01926-0     Document Type: Article

References (7)

1. 3-thin films, Sensors and Actuators B, 7 (1992) 257-261.
2. 3-thin film gas sensors based on the Volkenstein theory of catalysis, Sensors and Actuators B, 18-19 (1994) 125-131.
3. Th. Braunschweig and H. Geistlinger, Potential barriers near the junction of two boundaries, Thin Solid Films, 224 (1993) 196-202.
4. H. Geistlinger, Electron theory of thin -film gas sensors, Sensors and Actuators B, 17 (1993) 47-60.
5. 3-thin films, J. Mater. Sci. Lett., 11 (1992) 1728-1731.
6. V.F. Kiselev and O.V. Krylov, Electronic Phenomena in Adsorption and Catalysis, Springer, New York, 1986.
7. A. Many, Y. Goldstein and N.B. Grover, Semiconductor Surfaces, North-Holland, Amsterdam, 1965.