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Applied Physics Letters

Volumn 100, Issue 8, 2012, Pages

AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes

(5) Ju Chae, Dong a Yoon Kim, Dong a Geun Kim, Tae a Mo Sung, Yun a Doeck Kim, Moon b

a Korea University (South Korea)

b Chungnam National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ELECTRICAL AND OPTICAL PROPERTIES; ENERGY BANDGAPS; F-DOPING; FLUORINE-DOPED; INDIUM TIN OXIDE; INDIUM TIN OXIDE ELECTRODES; OUTPUT POWER; SHOTTKY BARRIER; SPECIFIC CONTACT RESISTANCES; ULTRAVIOLET LIGHT-EMITTING DIODES;

ELECTRIC PROPERTIES; ELECTRODES; FLUORINE; GALLIUM NITRIDE; INDIUM COMPOUNDS; OPTICAL PROPERTIES; TIN; TIN OXIDES;

LIGHT EMITTING DIODES;

EID: 84857727995 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3689765 Document Type: Article

Times cited : (31)

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