InGaN-based light-emitting diodes fabricated with transparent Ga-doped ZnO as ohmic p-contact

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 12, 2004, Pages 2704-2707

  Tamura, K ^a   Nakahara, K ^a   Sakai, M ^a   Nakagawa, D ^a   Ito, N ^a   Sonobe, M ^a   Takasu, H ^a   Tampo, H ^b   Fons, P ^b   Matsubara, K ^b   Iwata, K ^b   Yamada, A ^b   Niki, S ^b  

^a ROHM CO LTD   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; ELECTRODES; FABRICATION; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL EFFECTS; ZINC OXIDE; ATMOSPHERIC HUMIDITY; ELECTRIC CURRENTS; MICROPROCESSOR CHIPS; NICKEL ALLOYS; OXIDATION; TRANSPARENCY;

CONDUCTIVE OXIDES; CURRENT SPREADING LAYERS; FORWARD CURRENT; LUMINOUS EFFICIENCY; INJECTION CURRENTS; TRANSPARENT CONDUCTIVE OXIDES (TCO);

LIGHT EMITTING DIODES;

EID: 7044224627     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200405090     Document Type: Conference Paper

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