Improved electrical and thermal stability of solution-processed Li-doped ZnO thin-film transistors

IEEE Transactions on Electron Devices

Volumn 59, Issue 3, 2012, Pages 700-704

  Su, Bo Yuan ^a   Chu, Sheng Yuan ^a   Juang, Yung Der ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

Author keywords

Thermal stability; zinc oxide (ZnO) thin film transistors (TFTs)

Indexed keywords

CHANNEL LAYERS; CURRENT RATIOS; ETHANOLAMINES; FIELD-EFFECT MOBILITIES; GATE INSULATOR; OXYGEN DEFICIENCY; SOLUTION-PROCESSED; SUBTHRESHOLD SLOPE; THERMAL AND ELECTRICAL STABILITY; ZINC ACETATE DIHYDRATE; ZNO; ZNO FILMS;

SEMICONDUCTOR DOPING; SOL-GEL PROCESS; THERMODYNAMIC STABILITY; THIN FILM TRANSISTORS; ZINC COMPOUNDS; ZINC OXIDE;

LITHIUM;

EID: 84857643001     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2179549     Document Type: Article

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