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Volumn 722, Issue , 2002, Pages 65-70
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Influence of defects on current transport in GaN/InGaN multiple quantum well light-emitting diodes
a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
CRYSTAL DEFECTS;
CURRENT DENSITY;
ELECTRIC CURRENTS;
ELECTRIC PROPERTIES;
ELECTRON TRAPS;
ELECTRON TUNNELING;
HOLE TRAPS;
INTERDIFFUSION (SOLIDS);
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
OPTICAL PROPERTIES;
SAPPHIRE;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR JUNCTIONS;
SEMICONDUCTOR QUANTUM WELLS;
TRANSPORT PROPERTIES;
FORWARD BIAS;
LIGHT EMITTING DIODES;
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EID: 0036458113
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-722-k2.3 Document Type: Conference Paper |
Times cited : (3)
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References (15)
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