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Volumn 722, Issue , 2002, Pages 65-70

Influence of defects on current transport in GaN/InGaN multiple quantum well light-emitting diodes

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ELECTRON TRAPS; ELECTRON TUNNELING; HOLE TRAPS; INTERDIFFUSION (SOLIDS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS; TRANSPORT PROPERTIES;

EID: 0036458113     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-722-k2.3     Document Type: Conference Paper
Times cited : (3)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.