Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions

IEEE Electron Device Letters

Volumn 33, Issue 3, 2012, Pages 315-317

  Markov, Stanislav ^a   Cheng, Binjie ^a   Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Fully depleted silicon on insulator (SOI); random dopant fluctuations; statistical device variability

Indexed keywords

COMPACT MODEL; FULLY DEPLETED; FULLY DEPLETED SILICON-ON-INSULATOR; FULLY DEPLETED SOI; LOW-POWER SRAM; ON-CURRENTS; RANDOM DOPANT FLUCTUATION; SHORT-CHANNEL EFFECT; SILICON-ON-INSULATOR MOSFETS; SILICON-ON-INSULATOR TRANSISTORS; SOURCE AND DRAIN EXTENSIONS; STANDARD DEVIATION; STATISTICAL DEVICE VARIABILITY; STATISTICAL VARIABILITY; THIN BODY; THRESHOLD VOLTAGE DISTRIBUTION;

LOGIC DESIGN; MOSFET DEVICES; THRESHOLD VOLTAGE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 84857453989     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2179114     Document Type: Article

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