Suppression of DIBL and current-onset voltage variability in intrinsic channel fully depleted SOI MOSFETs

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2010, Pages

  Hiramoto, T ^a,b   Mizutani, T ^a   Kumar, A ^a   Nishida, A ^b   Tsunomura, T ^b   Inaba, S ^b   Takeuchi, K ^b   Kamohara, S ^b   Mogami, T ^b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b MIRAI Selete ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL DOPINGS; DOPED CHANNELS; FULLY DEPLETED SOI; INTRINSIC CHANNEL; MOSFETS; ONSET VOLTAGES; SOI-MOSFETS;

DOPING (ADDITIVES); SILICON ON INSULATOR TECHNOLOGY;

MOSFET DEVICES;

EID: 78650579761     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2010.5641063     Document Type: Conference Paper

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