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Current Applied Physics

Volumn 12, Issue 3, 2012, Pages 945-951

Influence of boron carbide on properties of CVD-diamond thin films at various deposition pressures

(2) Ullah, Mahtab a Ahmed, E a

a BAHAUDDIN ZAKARIYA UNIVERSITY (Pakistan)

Author keywords

Boron carbide; Growth rate; HFCVD; Resistivity; SEM

Indexed keywords

AS-GROWN; BORON-DOPED DIAMOND FILMS; CVD-DIAMOND; DEPOSITION PRESSURES; DOPING LEVELS; GRAIN SIZE; HFCVD; HOT-FILAMENT CHEMICAL VAPOR DEPOSITION; SILICON SUBSTRATES; THREE ORDERS OF MAGNITUDE;

BORON; CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; ELECTRIC CONDUCTIVITY; GROWTH RATE; HYDROGEN; METHANE; MORPHOLOGY; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SYNTHETIC DIAMONDS; X RAY DIFFRACTION;

BORON CARBIDE;

EID: 84857450282 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2011.12.015 Document Type: Article

Times cited : (12)

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