Effect of B/C ratio on the physical properties of highly boron-doped diamond films

Vacuum

Volumn 84, Issue 7, 2010, Pages 930-934

  Jia, Fuchao ^a,b   Bai, Yizhen ^a,b   Qu, Fang ^a,b   Zhao, Jijun ^a   Zhuang, Chunqiang ^a,b   Jiang, Xin ^c  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^c UNIVERSITY OF SIEGEN   (Germany)

Author keywords

Boron doping; Diamond film; HFCVD; SEM; XPS

Indexed keywords

BORON; CHEMICAL ANALYSIS; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; X RAY PHOTOELECTRON SPECTROSCOPY;

BORON-DOPED DIAMOND FILMS; BORON-DOPING; CHEMICAL BONDING STATE; CRYSTAL QUALITIES; FOUR-POINT PROBE METHOD; HFCVD; HOT-FILAMENT CHEMICAL VAPOR DEPOSITION; SILICON SUBSTRATES;

DIAMOND FILMS;

EID: 76849103840     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2010.01.003     Document Type: Article

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