Effect of gas composition on the growth and electrical properties of boron-doped diamond films

Diamond and Related Materials

Volumn 18, Issue 2-3, 2009, Pages 132-135

  Wang, Z L ^a   Lu, C ^a   Li, J J ^a   Gu, C Z ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

Boron doping; Carrier concentration; Diamond film; Resistivity

Indexed keywords

BIOACTIVITY; BORON; CARRIER CONCENTRATION; CIVIL AVIATION; DIAMOND CUTTING TOOLS; DIAMONDS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; GAS MIXTURES; GASES; GROWTH (MATERIALS); GROWTH KINETICS; HYDROGEN; METHANE; MIXTURES; NONMETALS; SCANNING ELECTRON MICROSCOPY; SUPERCONDUCTING FILMS; X RAY ANALYSIS;

AS-GROWN; AS-GROWN FILMS; BORON-DOPED DIAMOND FILMS; BORON-DOPING; CRYSTAL QUALITIES; DEPOSITION PROCESS; DIAMOND FILM; EFFECTIVE DOPING; ELECTRICAL PROPERTIES; FILM RESISTIVITIES; GAS COMPOSITIONS; GROWTH PROCESS; HALL MEASUREMENTS; HOT-FILAMENT CHEMICAL VAPOR DEPOSITIONS; RESISTIVITY; SCANNING ELECTRONS; SEM; X-RAY DIFFRACTIONS;

DIAMOND FILMS;

EID: 59649125876     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.10.040     Document Type: Article

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