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Diamond and Related Materials

Volumn 20, Issue 2, 2011, Pages 217-220

Grain boundary effect on the superconducting transition of microcrystalline boron-doped diamond films

(4) Lu, C a Tian, S B a Gu, C Z a Li, J J a

a INSTITUTE OF PHYSICS (China)

Author keywords

Boron doped diamond; Grain size; Superconducting transition

Indexed keywords

BORON CONCENTRATIONS; BORON DOPED DIAMOND; BORON-DOPED DIAMOND FILMS; ELECTRICAL TRANSPORT; GRAIN BOUNDARY EFFECTS; GRAIN SIZE; HOT-FILAMENT CHEMICAL VAPOR DEPOSITION; INHOMOGENEITIES; SILICON SUBSTRATES; SUPERCONDUCTING MECHANISM; SUPERCONDUCTING TRANSITION; SUPERCONDUCTING TRANSITIONS;

BORON; CHEMICAL VAPOR DEPOSITION; DIAMONDS; FILM PREPARATION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MICROCRYSTALLINE SILICON; SUPERCONDUCTING FILMS; SUPERCONDUCTING TRANSITION TEMPERATURE; SUPERCONDUCTIVITY;

DIAMOND FILMS;

EID: 79551517834 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/j.diamond.2010.12.003 Document Type: Article

Times cited : (13)

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