Dependence of reaction pressure on deposition and properties of boron-doped freestanding diamond films

Applied Surface Science

Volumn 256, Issue 6, 2010, Pages 1764-1768

  Li, Liuan ^a   Li, Hongdong ^a   Lü, Xianyi ^a   Cheng, Shaoheng ^a   Wang, Qiliang ^a   Ren, Shiyuan ^a   Liu, Junwei ^a   Zou, Guangtian ^a  

^a JILIN UNIVERSITY   (China)

Author keywords

Boron doping; Electrical properties; Freestanding CVD diamond films; Reaction pressure; Residual stress

Indexed keywords

BORON; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; HIGH PRESSURE EFFECTS IN SOLIDS; RESIDUAL STRESSES; SEMICONDUCTOR DOPING;

ATOMIC HYDROGEN; BORON-DOPING; CVD DIAMOND FILMS; FREE-STANDING DIAMOND FILMS; GROWTH FEATURE; HOT-FILAMENT CHEMICAL VAPOR DEPOSITION; REACTION PRESSURE; STRESS INCREASE;

DIAMOND FILMS;

EID: 72549088301     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.09.109     Document Type: Article

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