Radio-frequency electrical characteristics of single layer graphene

Japanese Journal of Applied Physics

Volumn 48, Issue 9 Part 1, 2009, Pages 0916011-0916013

  Jeon, Dae Young ^a   Lee, Kook Joo ^b   Kim, Moonil ^b   Kim, Dong Chul ^a   Chung, Hyun Jong ^a   Woo, Yun Sung ^a   Seo, Sunae ^a  

^a SAMSUNG Electronics   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DISPERSIVE BEHAVIORS; ELECTRICAL CHARACTERISTIC; ELECTRICAL RESPONSE; EQUIVALENT RESISTORS; FREQUENCY DEPENDENCE; HIGH-SPEED DEVICES; INTRINSIC KINETICS; METAL CONTACTS; OVERALL CHARACTERISTICS; RADIO FREQUENCIES; S PARAMETERS; SINGLE LAYER;

GRAPHITE; MONOLAYERS; SCATTERING PARAMETERS;

GRAPHENE;

EID: 77952716364     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.091601     Document Type: Article

References (18)

1. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov: Science 306 (2004) 666.
2. M. S. Purewal, Y. Zhang, and P. Kim: Phys. Status Solidi B 243 (2006) 3418.
3. A. K. Geim and K. S. Novoselov: Nat. Mater. 6 (2007) 183.
4. M. Y. Han, B. Oezyilmaz, Y. Zhang, and P. Kim: Phys. Rev. Lett. 98 (2007) 206805.
5. A. Naeemi and J. D. Meindl: IEEE Electron Device Lett. 28 (2007) 428.
6. A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth, and A. K. Geim: Phys. Rev. Lett. 97 (2006) 187401.
7. A. Nyshadham, C. L. Sibbald, and S. S. Stuchly: IEEE Trans. Microwave Theory Tech. 40 (1992) 305.
8. H. Wilhelm, M. Lelaurain, E. McRae, and B. Humbert: J. Appl. Phys. 84 (1998) 6552.
9. P. Lespade, A. Marchand, M. Couzi, and F. Cruege: Carbon 22 (1984) 375.
10. S. C. Jun, J. H. Choi, S. N. Cha, C. W. Baik, S. H. Lee, H. J. Kim, J. Hone, and J. M. Kim: Nanotechnology 18 (2007) 255701.
11. M. Zhang, X. Huo, and P. C. H. Chan: Appl. Phys. Lett. 88 (2006) 163109.
12. J. J. Plombon, K. O'Brien, F. Gstrein, V. M. Dubin, and Y. Jiao: Appl. Phys. Lett. 90 (2007) 063106.
13. M. G. Kang, J. H. Lim, S. H. Hong, D. J. Lee, S. W. Hwang, D. Whang, J. S. Hwang, and D. Ahn: Jpn. J. Appl. Phys. 47 (2008) 4965.
14. P. J. Burke, I. B. Spielman, J. P. Eisenstein, L. N. Pfeiffer, and K. W. West: Appl. Phys. Lett. 76 (2000) 745.
15. Y. W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, and P. Kim: Phys. Rev. Lett. 99 (2007) 246803.
16. P. J. Burke: IEEE Trans. Nanotechnol. 1 (2002) 129.
17. Y. Zhuang, B. Rejaei, H. Schellevis, M. Vroubel, and J. N. Burghartz: IEEE Electron Device Lett. 29 (2008) 319.
18. H. Ymeri, B. Nauwelaers, K. Maex, D. D. Roest, and S. Vandenberghe: Phys. Lett. A 293 (2002) 195.