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Volumn 520, Issue 9, 2012, Pages 3609-3613
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Deposition of nickel oxide by direct current reactive sputtering: Effect of oxygen partial pressure
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Author keywords
Nickel oxide (NiO); Reactive sputtering and electrical discharge characteristics; Thin films; Transparent p type semiconductor
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Indexed keywords
AS-DEPOSITED FILMS;
CONDUCTIVE GLASS;
CONSTANT DISCHARGE;
CONTROLLED GROWTH;
CRYSTALLOGRAPHIC DIRECTIONS;
DEPOSITION CONDITIONS;
DIRECT CURRENT;
DIRECT-CURRENT MAGNETRONS;
DISCHARGE CURRENTS;
DISCHARGE VOLTAGES;
EFFECT OF OXYGEN;
NICKEL OXIDE THIN FILMS;
NIO THIN FILM;
OXYGEN CONTENT;
POLYCRYSTALLINE;
PREFERENTIAL GROWTH;
TRANSPARENT P-TYPE SEMICONDUCTOR;
DEPOSITION;
ELECTRIC DISCHARGES;
MAGNETRONS;
REACTIVE SPUTTERING;
SEMICONDUCTOR GROWTH;
SUBSTRATES;
THIN FILMS;
VAPOR DEPOSITION;
NICKEL OXIDE;
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EID: 84857371437
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2011.12.068 Document Type: Article |
Times cited : (39)
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References (28)
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