메뉴 건너뛰기




Volumn 520, Issue 9, 2012, Pages 3609-3613

Deposition of nickel oxide by direct current reactive sputtering: Effect of oxygen partial pressure

Author keywords

Nickel oxide (NiO); Reactive sputtering and electrical discharge characteristics; Thin films; Transparent p type semiconductor

Indexed keywords

AS-DEPOSITED FILMS; CONDUCTIVE GLASS; CONSTANT DISCHARGE; CONTROLLED GROWTH; CRYSTALLOGRAPHIC DIRECTIONS; DEPOSITION CONDITIONS; DIRECT CURRENT; DIRECT-CURRENT MAGNETRONS; DISCHARGE CURRENTS; DISCHARGE VOLTAGES; EFFECT OF OXYGEN; NICKEL OXIDE THIN FILMS; NIO THIN FILM; OXYGEN CONTENT; POLYCRYSTALLINE; PREFERENTIAL GROWTH; TRANSPARENT P-TYPE SEMICONDUCTOR;

EID: 84857371437     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.12.068     Document Type: Article
Times cited : (39)

References (28)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.