NiO thin films by MOCVD of Ni(dmamb)2 and their resistance switching phenomena

Surface and Coatings Technology

Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 9252-9255

  Min, K C ^a   Kim, M ^b   You, Y H ^c   Lee, S S ^d   Lee, Y K ^d   Chung, T M ^d   Kim, C G ^d   Hwang, J H ^c   An, K S ^d   Lee, N S ^a   Kim, Y ^e  

^a Chungbuk National University   (South Korea)

^b Techno Semichem Co Ltd   (South Korea)

^c Hong Ik University   (South Korea)

^d Korea Research Institute of Chemical Technology   (South Korea)

^e Korea University   (South Korea)

Author keywords

Nickel bis(1 dimethylamino 2 methyl 2 butanolate); Nickel oxide; Resistance switching phenomenon; Resistive random access memory

Indexed keywords

CAPACITORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; STOICHIOMETRY; STRUCTURE (COMPOSITION); SUBSTRATES; THIN FILMS;

RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY;

NICKEL OXIDE;

CAPACITORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NICKEL OXIDE; POLYCRYSTALLINE MATERIALS; STOICHIOMETRY; STRUCTURE (COMPOSITION); SUBSTRATES; THIN FILMS;

EID: 34547687900     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.04.120     Document Type: Article

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