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Volumn 51, Issue 2 PART 1, 2012, Pages

Variation in absorber layer defect density in amorphous and microcrystalline silicon thin film solar cells with 2MeV electron bombardment

Author keywords

[No Author keywords available]

Indexed keywords

2-MEV ELECTRON; A-SI:H; ABSORBER LAYERS; EXPERIMENTAL DATA; MICROCRYSTALLINE SILICON THIN FILMS; ORDERS OF MAGNITUDE; QUALITATIVE DIFFERENCES; THERMAL-ANNEALING; THIN FILM SOLAR CELLS;

EID: 84857322818     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.022301     Document Type: Article
Times cited : (11)

References (22)
  • 16
    • 84857298554 scopus 로고    scopus 로고
    • ESTAR Program National Institute of Standards and Technology
    • ESTAR Program, National Institute of Standards and Technology [http://physics.nist.gov/PhysRefData/Star/Text/ESTAR.html].
  • 20
    • 79959454964 scopus 로고    scopus 로고
    • ed. A. V. Shah (EPFL Press, Lausanne) Chap. 3
    • F. Finger: in Thin-Film Silicon Solar Cells, ed. A. V. Shah (EPFL Press, Lausanne, 2010) Chap. 3, p. 97.
    • (2010) Thin-Film Silicon Solar Cells , pp. 97
    • Finger, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.