Solar cell of 6.3% efficiency employing high deposition rate (8 nm/s) microcrystalline silicon photovoltaic layer

Solar Energy Materials and Solar Cells

Volumn 93, Issue 6-7, 2009, Pages 980-983

  Sobajima, Yasushi ^a   Nishino, Mitsutoshi ^a   Fukumori, Taiga ^a   Kurihara, Masanori ^a   Higuchi, Takuya ^a   Nakano, Shinya ^a   Toyama, Toshihiko ^a   Okamoto, Hiroaki ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

High growth rate; high pressure depletion; Microcrystalline silicon; Solar cell; VHF PECVD

Indexed keywords

HIGH DEPOSITION RATES; HIGH FREQUENCIES; HIGH GROWTH RATE; HIGH-PRESSURE DEPLETION; I LAYERS; INPUT POWER; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITIONS; SHORT-CIRCUIT CURRENT DENSITIES; SILICON PHOTOVOLTAIC; VHF-PECVD;

ATOMIC LAYER DEPOSITION; CELL GROWTH; CONVERSION EFFICIENCY; HEAT PUMP SYSTEMS; MICROCRYSTALLINE SILICON; PHOTOVOLTAIC CELLS; PLASMA DEPOSITION; SILANES; SILICON SOLAR CELLS; SOLAR CELLS; SOLAR ENERGY; SOLAR POWER GENERATION; SWITCHING CIRCUITS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 67349231787     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.11.042     Document Type: Article

References (15)

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