Analysis of radiation response and recovery characteristics of amorphous silicon solar cells

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Volumn 2, Issue , 2006, Pages 1797-1800

  Shimazaki, Kazunori ^a   Imaizumi, Mitsuru ^a   Ohshima, Takeshi ^b   Itoh, Hisayoshi ^b   Kibe, Koichi ^a  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; PHOTOVOLTAIC CELLS; RADIATION EFFECTS;

LIGHT ILLUMINATION; RADIATION RESPONSE;

SILICON SOLAR CELLS;

EID: 41749094033     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279840     Document Type: Conference Paper

References (12)

1. S. Guha et al., "Amorphous Silicon Alloy Solar Cells for Space Applications", Proc. 2nd WCPEC, 1998, pp.3609-3613.
2. G. Oomen et al., "The Effects of Extremely High Radiation Fluxes on Amorphous Silicon Alloy Cells", Proc. 16th Europ. PVSEC, 2000, pp.1053-1056.
3. P. Tlomak et al., "Radiation Hardness Tests of Flexible, Thin-Film Photovoltaics for Space Applications", NASA/CP-2002-211831, pp.105-114.
4. J. E. Granata et al., "Thin-film Photovoltaic Proton Radiation Testing for a MEO Orbit", Proc 3rd Int. Energy Conversion Engineering Conf, 2005, AIAA 2005-5650.
5. K. R. Lord II et al., "Investigation of Light and Dark 1-V Characteristics of a-Si:H Alloy Solar Cells Irradiated with 1.0 MeV Protons", Conf. Conf. Rec 23rd IEEE Photovoltaic Specialists Conf., 1993, pp. 1448-1452.
6. J. R. Srour et al., "Damage Mechanisms in Radiation-Tolerant Amorphous Silicon Solar Cells", IEEE Trans. Nucl. Sci. 45, 1998, pp.2624-2631.
7. For example, G. P. Summers et al., "Damage Correlations in Semiconductors Exposed to Gamma, Electron, and Proton Radiations", IEEE Trans. Nucl. Sci. 40, 1993, pp.1372-1379.
8. S. R. Messenger et al., "NIEL for Heavy Ions: An Analytical Approach", IEEE Trans. Nucl. Sci. 50, 2003, pp. 1919-1923.
9. I. J. Michael et al., "Proton Nonionizing Energy Loss (NIEL) for Device Applications", IEEE Trans. Nucl. Sci. 50, 2003, pp.1924-1928.
10. J. F. Ziegler, "SRIM2003, The Stopping and Range of Ions Matter", http://www.srim.org/.
11. D. Redfield, "Kinetics, energetics, and origins of defects in amorphous Si:H", Appl. Phys. Lett. 52, 1987, pp.492-494.
12. D. L. Staebler et al., Appl. Phys. Lett. 31 (1997) pp.292-294.