A statistical exploration of multiple exciton generation in silicon quantum dots and optoelectronic application

Applied Physics Letters

Volumn 100, Issue 7, 2012, Pages

  Su, W A ^a   Shen, W Z ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

INCIDENT LIGHT; INTERNAL QUANTUM EFFICIENCY; IONIZATION MECHANISMS; MULTIPLE EXCITON; OPTOELECTRONIC APPLICATIONS; POWER CONVERSION EFFICIENCIES; SI QUANTUM DOT; SILICON QUANTUM DOTS; SINGLE STAGE; STATISTICAL MODELS; STATISTICAL THEORY; THRESHOLD ENERGY;

CONVERSION EFFICIENCY; EXCITONS; IMPACT IONIZATION; OPTOELECTRONIC DEVICES; SEMICONDUCTOR QUANTUM DOTS;

SILICON;

EID: 84857303803     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3687184     Document Type: Article

References (54)

1. L. Pavesi, L. Negro, C. Mazzoleni, G. Franzo, and F. Priolo, Nature 408, 440 (2000). 10.1038/35044012
2. J. H. Park, L. Gu, G. von Maltzahn, E. Ruoslahti, S. N. Bhatia, and M. J. Sailor, Nat. Mater. 8, 331 (2009). 10.1038/nmat2398
3. D. Timmerman, I. Izeddin, P. Stallinga, I. N. Yassievich, and T. Gregorkiewicz, Nat. Photonics 2, 105 (2008). 10.1038/nphoton.2007.279
4. V. Sukhovatkin, S. Hinds, L. Brzozowski, and E. H. Sargent, Science 324, 1542 (2009). 10.1126/science.1173812
5. V. I. Klimov, Appl. Phys. Lett. 89, 123118 (2006). 10.1063/1.2356314
6. A. Luque, A. Marti, and A. J. Nozik, MRS Bull. 32, 236 (2007). 10.1557/mrs2007.28
7. H. W. Hillhouse and M. C. Beard, Curr. Opin. Colloid. Interface Sci. 14, 245 (2009). 10.1016/j.cocis.2009.05.002
8. J. Sambur, T. Novet, and B. Parkinson, Science 330, 63 (2010). 10.1126/science.1191462
9. R. D. Schaller and V. I. Klimov, Phys. Rev. Lett. 92, 186601 (2004). 10.1103/PhysRevLett.92.186601
10. R. D. Schaller, M. A. Petruska, and V. I. Klimov, J. Phys. Chem. B 107, 13765 (2003). 10.1021/jp0311660
11. V. Klimov, A. Mikhailovsky, S. Xu, A. Malko, J. Hollingsworth, C. Leatherdale, H. Eisler, and M. Bawendi, Science 290, 314 (2000). 10.1126/science.290.5490.314
12. B. Kochman, A. D. Stiff-Roberts, S. Chakrabarti, J. D. Phillips, S. Krishna, J. Singh, and P. Bhattacharya, IEEE J. Quantum Electron. 39, 459 (2003). 10.1109/JQE.2002.808169
13. N. M. Gabor, Z. Zhong, K. Bosnick, J. Park, and P. L. McEuen, Science 325, 1367 (2009). 10.1126/science.1176112
14. J. J. H. Pijpers, R. Ulbricht, K. J. Tielrooij, A. Osherov, Y. Golan, C. Delerue, G. Allan, and M. Bonn, Nat. Phys. 5, 811 (2009). 10.1038/nphys1393
15. A. Franceschetti, J. M. An, and A. Zunger, Nano Lett. 6, 2191 (2006). 10.1021/nl0612401
16. M. B. Ji, S. Park, S. T. Connor, T. Mokari, Y. Cui, and K. J. Gaffney, Nano Lett. 9, 1217 (2009). 10.1021/nl900103f
17. R. J. Ellingson, M. C. Beard, J. C. Johnson, P. R. Yu, O. I. Micic, A. J. Nozik, A. Shabaev, and A. L. Efros, Nano Lett. 5, 865 (2005). 10.1021/nl0502672
18. R. D. Schaller, M. A. Petruska, and V. I. Klimov, Appl. Phys. Lett. 87, 253102 (2005). 10.1063/1.2142092
19. R. D. Schaller, M. Sykora, J. M. Pietryga, and V. I. Klimov, Nano Lett. 6, 424 (2006). 10.1021/nl052276g
20. J. M. Luther, M. C. Beard, Q. Song, M. Law, R. J. Ellingson, and A. J. Nozik, Nano Lett. 7, 1779 (2007). 10.1021/nl0708617
21. S. J. Kim, W. J. Kim, Y. Sahoo, A. N. Cartwright, and P. N. Prasad, Appl. Phys. Lett. 92, 031107 (2008). 10.1063/1.2835920
22. J. E. Murphy, M. C. Beard, A. G. Norman, S. P. Ahrenkiel, J. C. Johnson, P. Yu, O. I. Micic, R. J. Ellingson, and A. J. Nozik, J. Am. Chem. Soc. 128, 3241 (2006). 10.1021/ja0574973
23. D. Gachet, A. Avidan, I. Pinkas, and D. Oron, Nano Lett. 10, 164 (2010). 10.1021/nl903172f
24. Y. Kobayashi, T. Udagawa, and N. Tamai, Chem. Lett. 38, 830 (2009). 10.1246/cl.2009.830
25. M. C. Beard, K. P. Knutsen, P. R. Yu, J. M. Luther, Q. Song, W. K. Metzger, R. J. Ellingson, and A. J. Nozik, Nano Lett. 7, 2506 (2007). 10.1021/nl071486l
26. R. D. Schaller, J. M. Pietryga, and V. I. Klimov, Nano Lett. 7, 3469 (2007). 10.1021/nl072046x
27. D. Timmerman, J. Valenta, K. Dohnalova, W. D. A. M. de Boer, and T. Gregorkiewicz, Nat. Nanotechnol. 6, 710 (2011). 10.1038/nnano.2011.167
28. E. Fermi, Prog. Theor. Phys. 5, 570 (1950). 10.1143/PTP.5.570
29. S. Furukawa and T. Miyasato, Phys. Rev. B 38, 5726 (1988). 10.1103/PhysRevB.38.5726
30. J. von Behren, T. van Buuren, M. Zacharias, E. H. Chimowitz, and P. M. Fauchet, Solid State Commun. 105, 317 (1998). 10.1016/S0038-1098(97)10099-0
31. T. Kim, N. Park, K. Kim, G. Sung, Y. Ok, T. Seong, and C. Choi, Appl. Phys. Lett. 85, 5355 (2004). 10.1063/1.1814429
32. T. Van Buuren, L. Dinh, L. Chase, W. Siekhaus, and L. Terminello, Phys. Rev. Lett. 80, 3803 (1998). 10.1103/PhysRevLett.80.3803
33. C. Delerue, G. Allan, and M. Lannoo, J. Lumin. 80, 65 (1998). 10.1016/S0022-2313(98)00071-4
34. Q. Zhang and S. Bayliss, J. Appl. Phys. 79, 1351 (1996). 10.1063/1.361032
35. J. P. Proot, C. Delerue, and G. Allan, Appl. Phys. Lett. 61, 1948 (1992). 10.1063/1.108372
36. L. W. Wang and A. Zunger, J. Phys. Chem. 98, 2158 (1994). 10.1021/j100059a032
37. X. Chen, J. Zhao, G. Wang, and X. Shen, Phys. Lett. A 212, 285 (1996). 10.1016/0375-9601(96)00069-2
38. O. Madelung, Semiconductors: Data Handbook (Springer, Berlin, 2004).
39. A. D. Yoffe, Adv. Phys. 42, 173 (1993). 10.1080/00018739300101484
40. R. D. Schaller, V. M. Agranovich, and V. I. Klimov, Nat. Phys. 1, 189 (2005). 10.1038/nphys151
41. N. Turaeva, B. Oksengendler, and I. Uralov, Appl. Phys. Lett. 98, 243103 (2011). 10.1063/1.3599458
42. O. Christensen, J. Appl. Phys. 47, 689 (1976). 10.1063/1.322635
43. A. J. Nozik, Annu. Rev. Phys. Chem. 52, 193 (2001). 10.1146/annurev. physchem.52.1.193
44. M. T. Trinh, A. J. Houtepen, J. M. Schins, T. Hanrath, J. Piris, W. Knulst, A. P. L. M. Goossens, and L. D. A. Siebbeles, Nano Lett. 8, 1713 (2008). 10.1021/nl0807225
45. G. Allan and C. Delerue, Phys. Rev. B 73, 205423 (2006). 10.1103/PhysRevB.73.205423
46. M. C. Beard, A. G. Midgett, M. C. Hanna, J. M. Luther, B. K. Hughes, and A. J. Nozik, Nano Lett. 10, 3019 (2010). 10.1021/nl101490z
47. Y. Kayanuma, Phys. Rev. B 38, 9797 (1988). 10.1103/PhysRevB.38.9797
48. G. Nair, S. M. Geyer, L. Y. Chang, and M. G. Bawendi, Phys. Rev. B 78, 125325 (2008). 10.1103/PhysRevB.78.125325
49. J. A. McGuire, J. Joo, J. M. Pietryga, R. D. Schaller, and V. I. Klimov, Acc. Chem. Res. 41, 1810 (2008). 10.1021/ar800112v
50. V. I. Klimov, Annu. Rev. Phys. Chem. 58, 635 (2007). 10.1146/annurev. physchem.58.032806.104537
51. M. C. Hanna and A. J. Nozik, J. Appl. Phys. 100, 074510 (2006). 10.1063/1.2356795
52. G. Nair, L. Y. Chang, S. M. Geyer, and M. G. Bawendi, Nano Lett. 11, 2145 (2011). 10.1021/nl200798x
53. W. Shockley and H. J. Queisser, J. Appl. Phys. 32, 510 (1961). 10.1063/1.1736034
54. M. Razeghi and A. Rogalski, J. Appl. Phys. 79, 7433 (1996). 10.1063/1.362677