An upper bound to carrier multiplication efficiency in type II colloidal quantum dots

Nano Letters

Volumn 10, Issue 1, 2010, Pages 164-170

  Gachet, David ^a,b   Avidan, Assaf ^a   Pinkas, Iddo ^a   Oron, Dan ^a,b  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Carrier multiplication; Colloidal quantum dots; Type ii band alignment

Indexed keywords

BAND ALIGNMENTS; CARRIER MULTIPLICATION; CARRIER MULTIPLICATION EFFICIENCY; CDTE; COLLOIDAL QUANTUM DOTS; ENERGY BANDGAPS; EXPERIMENTAL CONDITIONS; HETEROSTRUCTURES; PHOTON ENERGY; QUANTUM DOTS; SUBNANOSECOND; TYPE II; UPPER BOUND;

ALIGNMENT; CADMIUM ALLOYS; CADMIUM COMPOUNDS; COLOR; CRYSTALS; LASER PULSES; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

CADMIUM DERIVATIVE; CADMIUM SELENIDE; CADMIUM SULFIDE; CADMIUM TELLURIDE; QUANTUM DOT; SELENIUM DERIVATIVE; SULFIDE; TELLURIUM; ZINC DERIVATIVE; ZINC SULFIDE;

ARTICLE; CHEMISTRY; COLLOID; CRYSTALLIZATION; LIGHT; LUMINESCENCE; METHODOLOGY; NANOTECHNOLOGY; PHOTOCHEMISTRY; PHOTON; SURFACE PROPERTY;

CADMIUM COMPOUNDS; COLLOIDS; CRYSTALLIZATION; LIGHT; LUMINESCENT MEASUREMENTS; NANOTECHNOLOGY; PHOTOCHEMISTRY; PHOTONS; QUANTUM DOTS; SELENIUM COMPOUNDS; SULFIDES; SURFACE PROPERTIES; TELLURIUM; ZINC COMPOUNDS;

EID: 74849103310     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl903172f     Document Type: Article

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