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Volumn 11, Issue 10, 2011, Pages 9316-9320
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An explicit continuous analytical model for gate all around (GAA) MOSFETs including the hot-carrier degradation effects
a a a a |
Author keywords
Degradation; GAA MOSFET; Modeling; Traps
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Indexed keywords
2-D NUMERICAL SIMULATION;
ANALYTICAL EXPRESSIONS;
ANALYTICAL MODEL;
BIAS CONDITIONS;
CRITICAL PROBLEMS;
DEEP SUB-MICRON;
DEVICE PARAMETERS;
DRAIN CURRENT ENHANCEMENT;
GATE METALS;
GATE STACKS;
GATE-ALL-AROUND;
HOT CARRIER DEGRADATION;
HOT CARRIER EFFECT;
MOS-FET;
MOSFETS;
NEW DEVICES;
OPERATING MODES;
TRAPS;
ANALYTICAL MODELS;
COMPUTER SIMULATION;
DEGRADATION;
GALLIUM ALLOYS;
JITTER;
LOGIC DESIGN;
MODELS;
TRANSCONDUCTANCE;
MOSFET DEVICES;
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EID: 84857143461
PISSN: 15334880
EISSN: None
Source Type: Journal
DOI: 10.1166/jnn.2011.4290 Document Type: Conference Paper |
Times cited : (10)
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References (14)
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