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Volumn 11, Issue 10, 2011, Pages 9316-9320

An explicit continuous analytical model for gate all around (GAA) MOSFETs including the hot-carrier degradation effects

Author keywords

Degradation; GAA MOSFET; Modeling; Traps

Indexed keywords

2-D NUMERICAL SIMULATION; ANALYTICAL EXPRESSIONS; ANALYTICAL MODEL; BIAS CONDITIONS; CRITICAL PROBLEMS; DEEP SUB-MICRON; DEVICE PARAMETERS; DRAIN CURRENT ENHANCEMENT; GATE METALS; GATE STACKS; GATE-ALL-AROUND; HOT CARRIER DEGRADATION; HOT CARRIER EFFECT; MOS-FET; MOSFETS; NEW DEVICES; OPERATING MODES; TRAPS;

EID: 84857143461     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2011.4290     Document Type: Conference Paper
Times cited : (10)

References (14)
  • 14
    • 84857163265 scopus 로고    scopus 로고
    • ATLAS: 2:D Device Simulator, SILVACO International
    • ATLAS: 2: SILVACO International (2008).
    • (2008) D Device Simulator


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.