An analytical study of hot-carrier degradation effects in sub-micron MOS devices

EPJ Applied Physics

Volumn 42, Issue 2, 2008, Pages 87-94

  Singh, A K ^a  

^a MULTIMEDIA UNIVERSITY   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DENSITY; DEGRADATION; HOT CARRIERS; THRESHOLD VOLTAGE;

HOT-CARRIER DEGRADATION EFFECTS; SUB-MICRON MOS DEVICES;

MOS DEVICES;

EID: 43149090741     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap:2008047     Document Type: Article

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