Influence of implantation and annealing on the surface topography of amorphous and polysilicon thin films

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 2, 2002, Pages 344-349

  Edrei, R ^a   Shauly, E N ^b   Hoffman, A ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b TOWER SEMICONDUCTOR LTD   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; COMPOSITION; FILM GROWTH; ION IMPLANTATION; NITROGEN; POLYSILICON; RAPID THERMAL ANNEALING; SILICON WAFERS; STOICHIOMETRY; SUBSTRATES; THERMAL EFFECTS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

WAFER PROCESSING;

SURFACE ROUGHNESS;

EID: 0036494004     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1445159     Document Type: Article

References (8)