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Volumn 59, Issue 4, 2009, Pages 413-424

Nano pattern formation and surface modifications by ion irradiation

Author keywords

AFM; Fabrication; InP; Ion irradiation; Nanotechnology; Semiconductor nanostructures

Indexed keywords

III-V SEMICONDUCTORS; ION BEAMS; ION BOMBARDMENT; IONS; NANODOTS; SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 70349786256     PISSN: 0011748X     EISSN: None     Source Type: Journal    
DOI: 10.14429/dsj.59.1541     Document Type: Article
Times cited : (12)

References (52)
  • 1
    • 85173323126 scopus 로고    scopus 로고
    • Indium phosphide ICs in strong demand for 40 Gbit/s networks
    • May
    • Streit, D. Indium phosphide ICs in strong demand for 40 Gbit/s networks. Compound Semiconductors, May 2002.
    • (2002) Compound Semiconductors
    • Streit, D.1
  • 2
    • 21944441562 scopus 로고    scopus 로고
    • A building block approach to manufacturing monolithic photonic integrated circuits
    • August
    • Humphreys, B. & O'Donell, A. A building block approach to manufacturing monolithic photonic integrated circuits. Compound Semiconductors, August 2003.
    • (2003) Compound Semiconductors
    • Humphreys, B.1    O'Donell, A.2
  • 4
    • 70349773483 scopus 로고    scopus 로고
    • Shipway eugenii katz. & itamar willner nanoparticle arrays on surfaces for electronic optical and sensor applications
    • Andrew, N.; Shipway, Eugenii Katz. & Itamar, Willner Nanoparticle Arrays on Surfaces for Electronic, Optical, and Sensor Applications. Chem Phys Chem, 2000, 1(1) 18-52.
    • (2000) Chem Phys Chem , vol.1 , Issue.1 , pp. 18-52
    • Andrew, N.1
  • 5
    • 3643090763 scopus 로고    scopus 로고
    • Theory of sputtering. I. sputtering yield of amorphous and polycrystalline targets
    • Sigmund, Peter. Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets. Phys. Rev. 1969, 184(2), 383-416.
    • Phys. Rev. 1969 , vol.184 , Issue.2 , pp. 383-416
    • Sigmund, P.1
  • 6
    • 84946547716 scopus 로고
    • Theory of ripple topography induced by ion bombardment
    • Mark Bradley, R. & James, M. & Harper, E. Theory of ripple topography induced by ion bombardment. J. Vac. Sci. Technol. A, 1988, 6 (4) 2390-2395
    • (1988) J. Vac. Sci. Technol. A , vol.6 , Issue.4 , pp. 2390-2395
    • Mark Bradley, R.1    James, M.2    Harper, E.3
  • 7
    • 0029338735 scopus 로고
    • Atomic force microscopy investigation of argon-bombarded InP: Effect of ion dose density
    • Demanet C. M. et al., Atomic force microscopy investigation of argon-bombarded InP: Effect of ion dose density. Surf. Interface Anal. 1995, 23(7-8), 433-39;
    • (1995) Surf. Interface Anal. , vol.23 , Issue.7-8 , pp. 33-39
    • Demanet, C.M.1
  • 8
    • 0030216896 scopus 로고    scopus 로고
    • Atomic force microscopy investigation of argon-bombarded InP: Effect of ion dose density
    • Demanet C. M. et al.,Atomic force microscopy investigation of argon-bombarded InP: Effect of ion dose density. Surf. Interface Anal.1996 24(8) 497-502;
    • (1996) Surf. Interface Anal. , vol.24 , Issue.8 , pp. 497-502
    • Demanet, C.M.1
  • 9
    • 0030215032 scopus 로고    scopus 로고
    • Atomic force microscopy investigation of argon-bombarded InP: Effect of ion dose density
    • Demanet C. M. et al.,Atomic force microscopy investigation of argon-bombarded InP: Effect of ion dose density. Surf. Interface Anal. 1996, 24(8), 503-510
    • (1996) Surf. Interface Anal. , vol.24 , Issue.8 , pp. 503-510
    • Demanet, C.M.1
  • 10
    • 0033520486 scopus 로고    scopus 로고
    • Formation of ordered nanoscale semiconductor dots by ion sputtering
    • Facsko, S.; Dekorsy, T.; Koerdt, C; Trappe, C; Kurz, H.; Vogt, A.& Hartnagel, H. L. Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering, Science, 1999, 285(5433), 1551-1553
    • (1999) Science , vol.285 , Issue.5433 , pp. 1551-1553
    • Facsko, S.1    Dekorsy, T.2    Koerdt, C.3    Trappe, C.4    Kurz, H.5    Vogt, A.6    Hartnagel, H.L.7
  • 11
    • 0001144569 scopus 로고    scopus 로고
    • Quantum dot and hole formation in sputter erosion
    • Kahng, B.; Jeong H. & Barabasi, A.-L. Quantum dot and hole formation in sputter erosion. Appl. Phys. Lett. 2001, 78(8), 805-807
    • (2001) Appl. Phys. Lett. , vol.78 , Issue.8 , pp. 805-807
    • Kahng, B.1    Jeong, H.2    Barabasi, A.-L.3
  • 12
    • 33744831489 scopus 로고    scopus 로고
    • Self-organized nanodot formation on InP(l00) by argon ion sputtering at normal incidence
    • Tan, S.K. & Wee, A.T.S. Self-organized nanodot formation on InP(l 00) by argon ion sputtering at normal incidence. J. Vac. Sci. Technol. B, 2006, 24(3), 1444-1448
    • (2006) J. Vac. Sci. Technol. B , vol.24 , Issue.3 , pp. 1444-1448
    • Tan, S.K.1    Wee, A.T.S.2
  • 13
    • 0034319951 scopus 로고    scopus 로고
    • Roughness evolution of ion sputtered rotating inp surfaces: Pattern formation and scaling laws
    • Frost, F.; Schindler, A. & Bigl, F. Roughness Evolution of Ion Sputtered Rotating InP Surfaces: Pattern Formation and Scaling Laws. Phys. Rev. Lett., 2000, 85(19), 4116-4119
    • (2000) Phys. Rev. Lett. , vol.85 , Issue.19 , pp. 4116-4119
    • Frost, F.1    Schindler, A.2    Bigl, F.3
  • 14
    • 33646405782 scopus 로고    scopus 로고
    • Pattern transitions on Ge surfaces during low-energy ion beam erosion
    • Ziberi, B.; Frost, F. & Rauschenbach, B. Pattern transitions on Ge surfaces during low-energy ion beam erosion. Appl. Phys. Lett., 2006, 88(17), 173115-731 18.
    • (2006) Appl. Phys. Lett. , vol.88 , Issue.17 , pp. 173115-173118
    • Ziberi, B.1    Frost, F.2    Rauschenbach, B.3
  • 15
    • 84926092304 scopus 로고
    • Surface roughness development during sputtering of GaAs and InP: Evidence for the role of surface diffusion in ripple formation and sputter cone development
    • Maclaren, S.W; Baker, J.E.; Finnegan, N.L. & Loxton, CM. Surface roughness development during sputtering of GaAs and InP: Evidence for the role of surface diffusion in ripple formation and sputter cone development. J. Vac. Sci. Technol. A, 1992, 10(3), 468-476
    • (1992) J. Vac. Sci. Technol. A , vol.10 , Issue.3 , pp. 468-476
    • MacLaren, S.W.1    Baker, J.E.2    Finnegan, N.L.3    Loxton, C.M.4
  • 16
    • 1042298615 scopus 로고    scopus 로고
    • The shape and ordering of self-organized nanostructures by ion sputtering. Proceedings of the E-MRS 2003 Symposium e on Ion Beams for Nanoscale Surface Modifications
    • Frost, F.; Ziberi, B.; Hoche, T. & Rauschenbach, B. The shape and ordering of self-organized nanostructures by ion sputtering. Proceedings of the E-MRS 2003 Symposium E on Ion Beams for Nanoscale Surface Modifications. Nucl. Instr. and Meth. B, 2004, 216, 9-19.
    • Nucl. Instr. and Meth. B , vol.2004 , Issue.216 , pp. 9-19
    • Frost, F.1    Ziberi, B.2    Hoche, T.3    Rauschenbach, B.4
  • 17
    • 0000545355 scopus 로고
    • Dynamic scaling of ion-sputtered surfaces
    • Cuerno, R. & Barabasi, A. L. Dynamic Scaling of Ion-Sputtered Surfaces. Phys. Rev. Lett., 1995, 74(23), 4746-4749
    • (1995) Phys. Rev. Lett. , vol.74 , Issue.23 , pp. 4746-4749
    • Cuerno, R.1    Barabasi, A.L.2
  • 18
    • 0000052564 scopus 로고    scopus 로고
    • Ion-induced effective surface diffusion in ion sputtering
    • Makeev, M. A. & Barabasi, A. L. Ion-induced effective surface diffusion in ion sputtering. Appl. Phys. Lett., 1997, 71(19), 2800-2803
    • (1997) Appl. Phys. Lett. , vol.71 , Issue.19 , pp. 2800-2803
    • Makeev, M.A.1    Barabasi, A.L.2
  • 20
    • 0000507179 scopus 로고
    • Persistent propagation of concentration waves in dissipative media far from thermal equilibrium
    • Kuramoto, Y. & Tsuzuki, T. Persistent Propagation of Concentration Waves in Dissipative Media Far from Thermal Equilibrium. Prog. ofTheo. Phys. 1976, 55(2), 356-369
    • (1976) Prog. of Theo. Phys. , vol.55 , Issue.2 , pp. 356-369
    • Kuramoto, Y.1    Tsuzuki, T.2
  • 21
    • 0018467679 scopus 로고
    • On self-turbulization of a laminar flame
    • Sivashinsky, G. I. On self-turbulization of a laminar flame. Acta Astronaut., 1979, 6(5-6), 569-591
    • (1979) Acta Astronaut. , vol.6 , Issue.5-6 , pp. 569-591
    • Sivashinsky, G.I.1
  • 22
    • 0000449281 scopus 로고    scopus 로고
    • Dynamics of ripple formation in sputter erosion: Nonlinear phenomena
    • Park, S.; Kahng, B.; Jeong, H. & Barabasi, A.L. Dynamics of Ripple Formation in Sputter Erosion: Nonlinear Phenomena. Phys. Rev. Lett., 1999, bf 83(17), 3486-3489
    • (1999) Phys. Rev. Lett. , vol.83 , Issue.17 , pp. 3486-3489
    • Park, S.1    Kahng, B.2    Jeong, H.3    Barabasi, A.L.4
  • 23
    • 5544220449 scopus 로고
    • Anisotropic kuramoto-sivashinsky equation for surface growth and erosion
    • Rost, M. & Krug, J. Anisotropic Kuramoto-Sivashinsky Equation for Surface Growth and Erosion. Phys. Rev. Lett., 1995, 75(21), 3894-13497
    • (1995) Phys. Rev. Lett. , vol.75 , Issue.21 , pp. 3894-13497
    • Rost, M.1    Krug, J.2
  • 24
    • 4243979739 scopus 로고
    • Dynamic Scaling of Growing Interfaces
    • Kardar, M.; Parisi, G. & Zhang, Y.-C. Dynamic Scaling of Growing Interfaces. Phys. Rev. Lett., 1986, 56(9), 889-892
    • (1986) Phys. Rev. Lett. , vol.56 , Issue.9 , pp. 889-892
    • Kardar, M.1    Parisi, G.2    Zhang, Y.-C.3
  • 25
    • 0025250972 scopus 로고
    • Infrared resonance excitation of ?-layers-a silicon-based infrared quantum-well detector
    • Tempel, G.; Schwarz, N.; Muller, F.; Koch, F.; Zeindl, H.P. & Eisele, I. Infrared resonance excitation of ?-layers-a silicon-based infrared quantum-well detector. Thin Solid Films, 1990, 184(1-2), 171-176
    • (1990) Thin Solid Films , vol.184 , Issue.1-2 , pp. 171-176
    • Tempel, G.1    Schwarz, N.2    Muller, F.3    Koch, F.4    Zeindl, H.P.5    Eisele, I.6
  • 26
    • 4244214240 scopus 로고
    • New isoelectronic trap: Antimony in indium phosphide
    • Bishop, S.G.; Shanabrook, B.V.; Klein, P.B. & Henry, R.L. New isoelectronic trap: Antimony in indium phosphide. Phys. Rev. B., 1988, 38 (12), 8469-8472
    • (1988) Phys. Rev. B. , vol.38 , Issue.12 , pp. 8469-8472
    • Bishop, S.G.1    Shanabrook, B.V.2    Klein, P.B.3    Henry, R.L.4
  • 27
    • 0024622587 scopus 로고
    • Damage formation and annealing of high energy ion implantation in Si.
    • Tamura, M. & Suzuki, T. Damage formation and annealing of high energy ion implantation in Si. Nucl. Instr. andMeth.B, 1989, 39(l-4), 318-329
    • (1989) Nucl. Instr. AndMeth.B , vol.39 , Issue.1-4 , pp. 318-329
    • Tamura, M.1    Suzuki, T.2
  • 29
    • 0346231380 scopus 로고
    • Interface effects and high conductivity in oxides grown from polycrystalline silicon
    • DiMaria D.J. & Kerr, D.R. Interface effects and high conductivity in oxides grown from polycrystalline silicon. Appl. Phys. Lett., 1975, 27(9), 505.
    • (1975) Appl. Phys. Lett. , vol.27 , Issue.9 , pp. 505
    • Dimaria, D.J.1    Kerr, D.R.2
  • 31
    • 0031370645 scopus 로고    scopus 로고
    • Swift heavy ions in materials science - Emerging possibilities
    • Mehta, G.K. Swift heavy ions in materials science - emerging possibilities. Vacuum, 1997, 48(12), 957-959.
    • (1997) Vacuum , vol.48 , Issue.12 , pp. 957-959
    • Mehta, G.K.1
  • 32
    • 0032089595 scopus 로고    scopus 로고
    • Range profiles and lattice location of MeV implant of Sb in Si (100)
    • Dey, S.; Kuri, G.; Rout B. & Varma, S. Range profiles and lattice location of MeV implant of Sb in Si (1 0 0). Nucl. Instr. Meth. B, 1998, 142(1-2), 35-42.
    • (1998) Nucl. Instr. Meth. B , vol.142 , Issue.1-2 , pp. 35-42
    • Dey, S.1    Kuri, G.2    Rout, B.3    Varma, S.4
  • 33
    • 0000235265 scopus 로고
    • A Monte Carlo computer program for the transport of energetic ions in amorphous targets
    • We have used the version SRIM'03
    • Biersack J. P. & Haggmark, L. G. A Monte Carlo computer program for the transport of energetic ions in amorphous targets. Nucl. Instr. and Meth. B, 1980, 174(1-2), 257-269 We have used the version SRIM'03
    • (1980) Nucl. Instr. and Meth. B , vol.174 , Issue.1-2 , pp. 257-269
    • Biersack, J.P.1    Haggmark, L.G.2
  • 34
    • 36449005943 scopus 로고
    • Stress and plastic flow in silicon during amorphization by ion bombardment
    • and reference therein
    • Volkert, C.A. Stress and plastic flow in silicon during amorphization by ion bombardment. J. Appl. Phys., 1991, 70(7), 3521-3527 and reference therein.
    • (1991) J. Appl. Phys. , vol.70 , Issue.7 , pp. 3521-3527
    • Volkert, C.A.1
  • 35
    • 3142776292 scopus 로고    scopus 로고
    • Evidence of plastic flow and recrystallization phenomena in swift (not, vert, similarlOO MeV) Si7+ ion irradiated silicon
    • Srivastava, P.C.; Ganesan, V. & Sinha, O.P. Evidence of plastic flow and recrystallization phenomena in swift (not, vert, similarlOO MeV) Si7+ ion irradiated silicon. Nucl. Instru. Methods, Phys. Res. B, 2004, 222(3-4), 491-496
    • (2004) Nucl. Instru. Methods, Phys. Res. B , vol.222 , Issue.3-4 , pp. 491-496
    • Srivastava, P.C.1    Ganesan, V.2    Sinha, O.P.3
  • 36
    • 0011969690 scopus 로고    scopus 로고
    • Raman scattering characterization of Si(100) implanted with mega-electron-volt Sb
    • Dey, S.; Roy, C; Pradhan, A. & Varma, S. Raman scattering characterization of Si( 100) implanted with mega-electron-volt Sb. J. Appl. Phys. 2000, 87(3), 1110-1117
    • (2000) J. Appl. Phys. , vol.87 , Issue.3 , pp. 1110-1117
    • Dey, S.1    Roy, C.2    Pradhan, A.3    Varma, S.4
  • 37
    • 33750696958 scopus 로고    scopus 로고
    • Formation and Shape Transition of Nanostructures on Si(100) surfaces after MeV Sb Implantation
    • DOI 10.1016/j.apsusc.2006.01.049, PII S0169433206001164
    • Dey, S.: Paramanik, D.; Ganeshan, V. & Varma, S. Formation and Shape Transition of Nanostructures on Si(100) surfaces after MeV Sb Implantation. Appl. Surf. Sci, 2006, 253(3), 1116-1121 (Pubitemid 44709270)
    • (2006) Applied Surface Science , vol.253 , Issue.3 , pp. 1116-1121
    • Dey, S.1    Paramanik, D.2    Ganesan, V.3    Varma, S.4
  • 38
    • 30944454297 scopus 로고    scopus 로고
    • Nanoscale defect formation on InP (111) surfaces after MeV Sb implantation
    • Paramanik, D.; Pradhan A. & Varma, S. Nanoscale defect formation on InP (111) surfaces after MeV Sb implantation. J. Appl. Phys., 2006, 99(1), 014304-014311.
    • (2006) J. Appl. Phys. , vol.99 , Issue.1 , pp. 014304-014311
    • Paramanik, D.1    Pradhan, A.2    Varma, S.3
  • 39
    • 0036494004 scopus 로고    scopus 로고
    • Influence of implantation and annealing on the surface topography of amorphous and polysilicon thin films
    • Edrei, R.; Shauly, E. N. & Hoffman, A. Influence of implantation and annealing on the surface topography of amorphous and polysilicon thin films . J. Vac. Sci. Techno!. A., 2002, 20(2), 344-349
    • (2002) J. Vac. Sci. Technol. A. , vol.20 , Issue.2 , pp. 344-349
    • Edrei, R.1    Shauly, E.N.2    Hoffman, A.3
  • 40
    • 25044448659 scopus 로고
    • Picosecond Raman studies of the Frhlich interaction in semiconductor alloys
    • Nash K.J. & Skolnick, M.S. Picosecond Raman studies of the Frhlich interaction in semiconductor alloys. Phys. Rev. Lett., 1988, 60(9), 863-963
    • (1988) Phys. Rev. Lett. , vol.60 , Issue.9 , pp. 863-963
    • Nash, K.J.1    Skolnick, M.S.2
  • 41
    • 33847755508 scopus 로고    scopus 로고
    • Raman scattering characterization and electron phonon coupling strength for MeV implanted InP(lll)
    • Paramanik D. & Varma, S. Raman scattering characterization and electron phonon coupling strength for MeV implanted InP(lll). J. Appl. Phy, 2007, 101(2), 023528-023535.
    • (2007) J. Appl. Phy , vol.101 , Issue.2 , pp. 023528-023535
    • Paramanik, D.1    Varma, S.2
  • 42
  • 43
    • 0346003810 scopus 로고
    • Ion implantation in semiconductors Part II: Damage production and annealing
    • Gibbons, J.F. Ion implantation in semiconductors Part II: Damage production and annealing. Proc. IEEE, 1972, 60(9), 1062-1096
    • (1972) Proc. IEEE , vol.60 , Issue.9 , pp. 1062-1096
    • Gibbons, J.F.1
  • 44
    • 0001678003 scopus 로고    scopus 로고
    • Formation of discontinuous tracks in single-crystalline InP by 250-MeV Xe-ion irradiation
    • Herre, O.; Wesch, W; Wendler, E.; Gaiduk. P.I.; Komarov, F.F.; Klaumunzer, S. & Meier, P. Formation of discontinuous tracks in single-crystalline InP by 250-MeV Xe-ion irradiation. Phy. Rev. B., 1998, 58(8), 4832-4837
    • (1998) Phy. Rev. B. , vol.58 , Issue.8 , pp. 4832-4837
    • Herre, O.1    Wesch, W.2    Wendler, E.3    Gaiduk., P.I.4    Komarov, F.F.5    Klaumunzer, S.6    Meier, P.7
  • 45
    • 0018524009 scopus 로고
    • Raman scattering studies of surface space charge layers and Schottky barrier formation in InP
    • Pinczuk, A.; Ballman, A.A.; Nahory, R.E.; Pollack, M.A. & Worlock, J.M. Raman scattering studies of surface space charge layers and Schottky barrier formation in InP. J. Vac. Sci. Technol., 1979, 16(5), 1168-1170
    • (1979) J. Vac. Sci. Technol. , vol.16 , Issue.5 , pp. 1168-1170
    • Pinczuk, A.1    Ballman, A.A.2    Nahory, R.E.3    Pollack, M.A.4    Worlock, J.M.5
  • 46
    • 0021201335 scopus 로고
    • Effects of As+ ion implantation on the Raman spectra of GaAs: Spatial correlation interpretation
    • Tiong, K.K.; Amritharaj, P.M.; Pollak F.H. & Aspens, D.E. Effects of As+ ion implantation on the Raman spectra of GaAs: Spatial correlation interpretation. Appl.Phys. Lett., 1984, 44(1), 122-125.
    • (1984) Appl.Phys. Lett. , vol.44 , Issue.1 , pp. 122-125
    • Tiong, K.K.1    Amritharaj, P.M.2    Pollak, F.H.3    Aspens, D.E.4
  • 47
    • 0019602990 scopus 로고
    • The one phonon Raman spectrum in microcrystalline silicon
    • Richter, H.; Wang, Z.R & Ley, L. The one phonon Raman spectrum in microcrystalline silicon. Solid State Commun., 1981, 39(5), 625-629
    • (1981) Solid State Commun. , vol.39 , Issue.5 , pp. 625-629
    • Richter, H.1    Wang, Z.R.2    Ley, L.3
  • 48
    • 0001556124 scopus 로고    scopus 로고
    • Raman scattering assessment of Si+implantation damage in InP
    • Cusco, R.; Talamas, G.; Artus, L.; Martin J.M. & Gonzalez-Diaz, G. Raman scattering assessment of Si+implantation damage in InP. J. Appl. Phys, 1996, 79(8), 3927-3930.
    • (1996) J. Appl. Phys , vol.79 , Issue.8 , pp. 3927-3930
    • Cusco, R.1    Talamas, G.2    Artus, L.3    Martin, J.M.4    Gonzalez-Diaz, G.5
  • 49
    • 0001565213 scopus 로고
    • A comparative study of MeV and medium-energy ion implantation into IIIV compounds
    • Wesch, W.; Wendler, E.; Bachmann, T. & Herre, O. A comparative study of MeV and medium-energy ion implantation into IIIV compounds. Nucl. Instru. Meth. Res. B. 1995, 96(1-2), 290-293
    • (1995) Nucl. Instru. Meth. Res. B , vol.96 , Issue.1-2 , pp. 290-293
    • Wesch, W.1    Wendler, E.2    Bachmann, T.3    Herre, O.4
  • 50
    • 0001374485 scopus 로고
    • Raman scattering in amorphous Ge and IIIV compounds
    • (Amorphous and Liquid Semiconductors)
    • Wihl, M.; Cardona M. & Tauc, J. Raman scattering in amorphous Ge and IIIV compounds. J. Non-Cryst. Solids 8-10(Amorphous and Liquid Semiconductors), 1972, 172-178
    • (1972) J. Non-Cryst. Solids , vol.8-10 , pp. 172-178
    • Wihl, M.1    Cardona, M.2    Tauc, J.3
  • 51
    • 0027575854 scopus 로고
    • Correlation from randomness: Quantitative analysis of ion-etched graphite surfaces using the scanning tunneling microscope
    • Eklund, E.A.; Snyder, E.J. & Williams, R.S. Correlation from randomness: quantitative analysis of ion-etched graphite surfaces using the scanning tunneling microscope. Surf. Sci., 1993, 285(3), 157-180
    • (1993) Surf. Sci. , vol.285 , Issue.3 , pp. 157-180
    • Eklund, E.A.1    Snyder, E.J.2    Williams, R.S.3
  • 52
    • 0035894250 scopus 로고    scopus 로고
    • Temperature dependent roughness of electronically excited InP surfaces
    • Singh, J.P.; Singh, R.; Mishra, N.C.; Kanjilal, D. & Ganeshan, V. Temperature dependent roughness of electronically excited InP surfaces. J. Appl. Phys., 2001, 90(12), 5968-5973
    • (2001) J. Appl. Phys. , vol.90 , Issue.12 , pp. 5968-5973
    • Singh, J.P.1    Singh, R.2    Mishra, N.C.3    Kanjilal, D.4    Ganeshan, V.5


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