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Volumn 520, Issue 8, 2012, Pages 3314-3318
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Size effect on Ge nanowires growth kinetics by the vapor-liquid-solid mechanism
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Author keywords
Ge nanowires; Growth rate; Nanocatalyst; UHV CVD; Vapor liquid solid
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Indexed keywords
CATALYST SIZE;
CRITICAL RADIUS;
EXPERIMENTAL DATA;
GASEOUS PRECURSORS;
GERMANIUM NANOWIRES;
GIBBS-THOMSON;
GROWTH CONDITIONS;
MODEL-BASED OPC;
NANO-CATALYST;
SIZE EFFECTS;
UHV-CVD;
ULTRA HIGH VACUUM CHEMICAL VAPOR DEPOSITION;
VAPOR-LIQUID-SOLID;
VAPOR-LIQUID-SOLID GROWTH MECHANISM;
VAPOR-LIQUID-SOLID MECHANISM;
CATALYSTS;
CHEMICAL VAPOR DEPOSITION;
GERMANIUM;
GROWTH RATE;
NANOWIRES;
THERMOELECTRICITY;
VAPORS;
LIQUIDS;
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EID: 84857041245
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2011.10.089 Document Type: Conference Paper |
Times cited : (11)
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References (19)
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