Electrical performance and interface states studies of undoped and Zn-doped CdO/p-Si heterojunction devices

Materials Chemistry and Physics

Volumn 132, Issue 2-3, 2012, Pages 550-558

  Farag, A A M ^a   Cavas, M ^b   Yakuphanoglu, F ^c,d  

^a Ain Shams University   (Egypt)

^b KAHRAMANMARAS SUTCU IMAM UNIVERSITY   (Turkey)

^c FIRAT UNIVERSITY   (Turkey)

^d KING SAUD UNIVERSITY   (Saudi Arabia)

Author keywords

Heterostructures; Semiconductors; Sol gel growth; Thin films

Indexed keywords

BIAS VOLTAGE; CAPACITANCE; DIODES; DOPING (ADDITIVES); ELECTRIC RESISTANCE; ELECTRIC SPACE CHARGE; HETEROJUNCTIONS; INTERFACE STATES; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SOL-GEL PROCESS; SOL-GELS; THERMIONIC EMISSION; THIN FILMS; ZINC;

CURRENT DENSITY-VOLTAGE CHARACTERISTICS; ELECTRICAL PERFORMANCE; HETEROJUNCTION DEVICES; INTERFACE STATE DENSITY; RECTIFICATION BEHAVIOR; SOL-GEL GROWTH; SOL-GEL SPIN COATING METHOD; SPACE CHARGE LIMITED CONDUCTION;

ELECTRIC RECTIFIERS;

EID: 84856601854     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2011.11.068     Document Type: Article

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