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Journal of Alloys and Compounds

Volumn 506, Issue 1, 2010, Pages 188-193

Electrical characterization of nanocluster n-CdO/p-Si heterojunction diode

(4) Yakuphanoglu, Fahrettin a Caglar, Mujdat b Caglar, Yasemin b Ilican, Saliha b

a FIRAT UNIVERSITY (Turkey)

b ANADOLU UNIVERSITY (Turkey)

Author keywords

Heterojunction semiconductor devices; Nanomaterials; Nanostructures; Oxides

Indexed keywords

CDO FILMS; CONDUCTANCE-FREQUENCY; CURRENT VOLTAGE; ELECTRICAL CHARACTERIZATION; ELECTRICAL PROPERTY; HETEROJUNCTION DIODES; HETEROJUNCTION SEMICONDUCTOR DEVICES; IDEALITY FACTORS; ILLUMINATION INTENSITY; INTERFACE STATE; INTERFACE STATE DENSITY; N VALUE; NANO-MATERIALS; OPTICAL ABSORPTION; P-N HETEROJUNCTIONS; POLYCRYSTALLINE; REVERSE CURRENTS; SCANNING ELECTRON MICROSCOPY IMAGE; SERIES RESISTANCES; SOL-GEL METHODS; STRUCTURAL AND OPTICAL PROPERTIES;

CADMIUM COMPOUNDS; ELECTRIC PROPERTIES; GELS; HETEROJUNCTIONS; NANOCLUSTERS; NANOSTRUCTURED MATERIALS; OPEN CIRCUIT VOLTAGE; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR SWITCHES; SILICON; SOL-GEL PROCESS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77956094660 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2010.06.174 Document Type: Article

Times cited : (65)

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