BiFeO3 thin films prepared by MOCVD

Surface and Coatings Technology

Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 9149-9153

  Kartavtseva, M S ^a,b   Gorbenko, O Yu ^a   Kaul, A R ^a   Akbashev, A R ^a   Murzina, T V ^a   Fusil, S ^b   Barthelemy A ^b   Pailloux, F ^c  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b CNRS   (France)

^c UNIVERSITÉ DE POITIERS   (France)

Author keywords

AFM; MOCVD; Multiferroics; Oxides; TEM; X Ray diffraction

Indexed keywords

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; FERROELECTRIC THIN FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; STOICHIOMETRY; THERMODYNAMIC STABILITY;

RESIDENCE TIME; SELF-ORGANIZED NANODOMAIN VARIANT STRUCTURE;

SEMICONDUCTING BISMUTH COMPOUNDS;

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; FERROELECTRIC THIN FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING BISMUTH COMPOUNDS; STOICHIOMETRY; THERMODYNAMIC STABILITY;

EID: 34547673603     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.04.099     Document Type: Article

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