메뉴 건너뛰기




Volumn 51, Issue 3, 2012, Pages 365-369

Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50% in the near to far ultraviolet range for single photon counting applications

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CHARGE COUPLED DEVICES; DEPOSITION; EFFICIENCY; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PARTICLE BEAMS; PHOTONS; SEMICONDUCTOR DOPING;

EID: 84856280402     PISSN: 1559128X     EISSN: 15394522     Source Type: Journal    
DOI: 10.1364/AO.51.000365     Document Type: Article
Times cited : (82)

References (25)
  • 3
    • 78649545614 scopus 로고    scopus 로고
    • A low-noise, single-photon avalanche diode in standard 0.13 μm complementary metal-oxide-semiconductor process
    • R. M. Field, J. Larry, J. Cohn, L. Paninski, and K. L. Shepard, "A low-noise, single-photon avalanche diode in standard 0.13 μm complementary metal-oxide-semiconductor process," Appl. Phys. Lett. 97, 211111 (2010).
    • (2010) Appl. Phys. Lett. , vol.97 , pp. 211111
    • Field, R.M.1    Larry, J.2    Cohn, J.3    Paninski, L.4    Shepard, K.L.5
  • 4
    • 0035471198 scopus 로고    scopus 로고
    • Impactron-a new solid state image intensifier
    • DOI 10.1109/16.954460, PII S0018938301083745
    • J. Hynecek, "Impactron-A new solid state image intensifier," IEEE Trans. Electron Devices 48, 2238-2241 (2001). (Pubitemid 33018185)
    • (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.10 , pp. 2238-2241
    • Hynecek, J.1
  • 7
    • 25144459393 scopus 로고    scopus 로고
    • Design and characterization of a CMOS 3-D image sensor based on single photon avalanche diodes
    • DOI 10.1109/JSSC.2005.848173
    • C. Niclass, A. Rochas, P. A. Besse, and E. Charbon, "Design and characterization of a CMOS 3-D image sensor based on single photon avalanche diodes," IEEE J. Solid-State Circuits 40, 1847-1854 (2005) (Pubitemid 41352162)
    • (2005) IEEE Journal of Solid-State Circuits , vol.40 , Issue.9 , pp. 1847-1854
    • Niclass, C.1    Rochas, A.2    Besse, P.-A.3    Charbon, E.4
  • 8
    • 40949127455 scopus 로고    scopus 로고
    • Fully integrated single photon avalanche diode detector in standard CMOS 0.18-m technology
    • DOI 10.1109/TED.2007.914839
    • N. Faramarzpour, M. J. Deen, S. Shirani, and Q. Fang, "Fully integrated single photon avalanche diode detector in standard CMOS 0.18 μm technology," IEEE Trans. Electron Devices 55, 760-767 (2008). (Pubitemid 351404531)
    • (2008) IEEE Transactions on Electron Devices , vol.55 , Issue.3 , pp. 760-767
    • Faramarzpour, N.1    Deen, M.J.2    Shirani, S.3    Fang, Q.4
  • 9
    • 0009683740 scopus 로고
    • Growth of a deltadoped silicon layer by molecular-beam epitaxy on a chargecoupled device for reflection-limited ultraviolet quantum efficiency
    • M. E. Hoenk, P. J. Grunthaner, F. J. Grunthaner, R. W. Terhune, M. Fattahi, and H. F. Tseng, "Growth of a deltadoped silicon layer by molecular-beam epitaxy on a chargecoupled device for reflection-limited ultraviolet quantum efficiency," Appl. Phys. Lett. 61, 1084-1086 (1992).
    • (1992) Appl. Phys. Lett. , vol.61 , pp. 1084-1086
    • Hoenk, M.E.1    Grunthaner, P.J.2    Grunthaner, F.J.3    Terhune, R.W.4    Fattahi, M.5    Tseng, H.F.6
  • 10
    • 29144480038 scopus 로고    scopus 로고
    • Enhanced QE of high purity silicon imagers by ultralow temperature surface modification using Sb-doping
    • J. Blacksberg, M. E. Hoenk, S. T. Elliott, S. E. Holland, and S. Nikzad, "Enhanced QE of high purity silicon imagers by ultralow temperature surface modification using Sb-doping," Appl. Phys. Lett. 87, 254101 (2005)
    • (2005) Appl. Phys. Lett. , vol.87 , pp. 254101
    • Blacksberg, J.1    Hoenk, M.E.2    Elliott, S.T.3    Holland, S.E.4    Nikzad, S.5
  • 15
    • 77956213561 scopus 로고    scopus 로고
    • Characterization and absolute QE measurements of delta-doped N-channel and P-channel CCDs
    • B. C. Jacquot, S. P. Monacos, T. J. Jones, J. Blacksberg, M. E. Hoenk, and S. Nikzad, "Characterization and absolute QE measurements of delta-doped N-channel and P-channel CCDs," Proc. SPIE 7742, 774201 (2010).
    • (2010) Proc. SPIE , vol.7742 , pp. 774201
    • Jacquot, B.C.1    Monacos, S.P.2    Jones, T.J.3    Blacksberg, J.4    Hoenk, M.E.5    Nikzad, S.6
  • 16
    • 79955606576 scopus 로고    scopus 로고
    • A system and methodologies for absolute quantum efficiency measurements from the vacuum ultraviolet through the near infrared
    • B. C. Jacquot, S. P. Monacos, M. E. Hoenk, F. Greer, T. J. Jones, and S. Nikzad, "A system and methodologies for absolute quantum efficiency measurements from the vacuum ultraviolet through the near infrared," Rev. Sci. Instrum. 82, 043102 (2011).
    • (2011) Rev. Sci. Instrum. , vol.82 , pp. 043102
    • Jacquot, B.C.1    Monacos, S.P.2    Hoenk, M.E.3    Greer, F.4    Jones, T.J.5    Nikzad, S.6
  • 19
    • 0000066043 scopus 로고    scopus 로고
    • Absolute silicon photodiodes for 160 nm to 254 nm photons
    • L. R. Canfield, R. E. Vest, R. Korde, H. Schmidtke, and R. Desor, "Absolute silicon photodiodes for 160 nm to 254 nm photons," Metrologia 35, 329-334 (1998). (Pubitemid 128432502)
    • (1998) Metrologia , vol.35 , Issue.4 , pp. 329-334
    • Canfield, L.R.1    Vest, R.E.2    Korde, R.3    Schmidtke, H.4    Desor, R.5
  • 20
    • 84893893792 scopus 로고    scopus 로고
    • Photon transfer : DN [lambda]
    • J. R. Janesick, Photon Transfer : DN [lambda] (SPIE, 2007).
    • (2007) SPIE
    • Janesick, J.R.1
  • 21
    • 0029357301 scopus 로고
    • Vacuumultraviolet quantum efficiency of a thinned, backsideilluminated charge-coupled device
    • P. F. Morrissey, S. R. McCandliss, and P.D. Feldman, " Vacuumultraviolet quantum efficiency of a thinned, backsideilluminated charge-coupled device," Appl. Opt. 34, 4640-4650 (1995).
    • (1995) Appl. Opt. , vol.34 , pp. 4640-4650
    • Morrissey, P.F.1    McCandliss, S.R.2    Feldman, P.D.3
  • 22
    • 33750720340 scopus 로고    scopus 로고
    • Direct detection of 0.1-20 keVelectrons with delta doped, fully depleted, high purity silicon p-i-n diode arrays
    • S. Nikzad, T. J. Cunningham, M. E. Hoenk, R. P. Ruiz, D. M. Soules, and S. E. Holland, "Direct detection of 0.1-20 keVelectrons with delta doped, fully depleted, high purity silicon p-i-n diode arrays," Appl. Phys. Lett. 89, 182114-182116 (2006).
    • (2006) Appl. Phys. Lett. , vol.89 , pp. 182114-182116
    • Nikzad, S.1    Cunningham, T.J.2    Hoenk, M.E.3    Ruiz, R.P.4    Soules, D.M.5    Holland, S.E.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.