III-Nitride avalanche photodiodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7222, Issue , 2009, Pages

  McClintock, Ryan ^a   Pau, Jose L ^a   Bayram, Can ^a   Fain, Brano ^a   Giedraitis, Paul ^a   Razeghi, Manijeh ^a   Ulmer, Melville P ^b  

^a Northwestern University   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

Avalanche photodiodes; GaN; Photodetector; Photon counting; Ultraviolet

Indexed keywords

CRITICAL ISSUES; DELTA-DOPING; FUTURE PROSPECTS; GAN; GEIGER MODES; HIGH QUALITIES; HIGH SENSITIVITIES; III NITRIDES; MATERIAL QUALITIES; NOVEL DEVICES; P-TYPE DOPING; PHOTON COUNTING; PHOTON FLUXES; SINGLE-PHOTON DETECTIONS; SINGLE-PHOTON LEVELS; SPECTRAL RESPONSE; STATE-OF-THE ARTS; ULTRA VIOLETS; ULTRAVIOLET;

AVALANCHE PHOTODIODES; AVALANCHES (SNOWSLIDES); ELECTRIC FIELDS; GALLIUM ALLOYS; GALLIUM NITRIDE; IMPACT IONIZATION; MILITARY APPLICATIONS; MULTIPHOTON PROCESSES; NOISE POLLUTION; OPTOELECTRONIC DEVICES; PARTICLE BEAMS; PHOTODETECTORS; PHOTODIODES; SEMICONDUCTING GALLIUM;

PHOTONS;

EID: 62449314673     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.809704     Document Type: Conference Paper

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