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Volumn 87, Issue 25, 2005, Pages 1-3
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Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM;
ANTIMONY;
CHARGE COUPLED DEVICES;
DOPING (ADDITIVES);
QUANTUM EFFICIENCY;
SENSORS;
SILICON;
SURFACE TREATMENT;
AL-METALLIZED DEVICES;
SILICON CAP LAYER;
SILICON IMAGING DETECTORS;
ULTRALOW TEMPERATURE SURFACE MODIFICATION;
IMAGING SYSTEMS;
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EID: 29144480038
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2149181 Document Type: Article |
Times cited : (20)
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References (11)
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