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Volumn 87, Issue 25, 2005, Pages 1-3

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANTIMONY; CHARGE COUPLED DEVICES; DOPING (ADDITIVES); QUANTUM EFFICIENCY; SENSORS; SILICON; SURFACE TREATMENT;

EID: 29144480038     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2149181     Document Type: Article
Times cited : (20)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.