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Applied Physics Letters

Volumn 97, Issue 21, 2010, Pages

A low-noise, single-photon avalanche diode in standard 0.13 μm complementary metal-oxide-semiconductor process

(5) Field, Ryan M a Lary, Jenifer b Cohn, John b Paninski, Liam c Shepard, Kenneth L a

a Department of Earth and Environmental Sciences (United States)

b IBM (United States)

c NONE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS POINTS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DARK COUNT RATE; FIGURE OF MERIT; FLUORESCENT LIFETIME; FRAME-RATE; LOW NOISE; PHOTON DETECTION; ROOM TEMPERATURE; SINGLE PHOTON AVALANCHE DIODE;

DIELECTRIC DEVICES; DIODES; IMPULSE RESPONSE; MULTIPHOTON PROCESSES; PARTICLE BEAMS; PHOTONS; SEMICONDUCTOR DIODES;

AVALANCHE DIODES;

EID: 78649545614 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3518473 Document Type: Article

Times cited : (41)

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