Direct detection of 0.1-20 keV electrons with delta doped, fully depleted, high purity silicon p-i-n diode arrays

Applied Physics Letters

Volumn 89, Issue 18, 2006, Pages

  Nikzad, Shouleh ^a   Cunningham, T J ^a   Hoenk, Michael E ^a   Ruiz, R P ^a   Soules, D M ^a   Holland, Stephen E ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DIODES; DOPING (ADDITIVES); IONIZING RADIATION; MOLECULAR BEAM EPITAXY; QUANTUM THEORY; SILICON;

DEVICE TESTING; DIODE ARRAYS; QUANTUM YIELD; SHALLOW PENETRATING IONIZING RADIATION;

ELECTRONS;

EID: 33750720340     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2360904     Document Type: Article

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