High-performance pentacene-based thin-film transistors and inverters with solution-processed barium titanate insulators

IEEE Transactions on Electron Devices

Volumn 59, Issue 2, 2012, Pages 477-484

  Wei, Chia Yu ^a   Kuo, Shu Hao ^a   Huang, Wen Chieh ^a   Hung, Yu Ming ^a   Yang, Chih Kai ^a   Adriyanto, Feri ^a   Wang, Yeong Her ^a,b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL APPLIED RESEARCH LABORATORIES   (Taiwan)

Author keywords

Barium titanate (BTO); high permittivity; high saturation field effect mobility; organic inverter; organic thin film transistor (OTFT); pentacene; solution process

Indexed keywords

HIGH PERMITTIVITY; HIGH SATURATION FIELD-EFFECT MOBILITY; ORGANIC INVERTER; ORGANIC THIN FILM TRANSISTORS; PENTACENES; SOLUTION PROCESS;

ATOMIC FORCE MICROSCOPY; BARIUM; CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; LOGIC CIRCUITS; PERMITTIVITY; RAMAN SPECTROSCOPY; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; TRANSISTORS; VANADIUM; X RAY DIFFRACTION ANALYSIS;

BARIUM TITANATE;

EID: 84856246797     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2174459     Document Type: Article

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