Complementary circuits based on solution processed low-voltage organic field-effect transistors

Synthetic Metals

Volumn 159, Issue 21-22, 2009, Pages 2368-2370

  Ball, James M ^a   Wöbkenberg, Paul H ^a   Kooistra, Floris B ^b   Hummelen, Jan C ^b   de Leeuw, Dago M ^c   Bradley, Donal D C ^a   Anthopoulos, Thomas D ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF GRONINGEN   (Netherlands)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Fullerene; Inverter; Low voltage; OFET; Organic complementary logic; Organic field effect transistor; P3HT; Phosphonic acid; Self assembled monolayer dielectric

Indexed keywords

COMPLEMENTARY LOGIC; LOW-VOLTAGE; ORGANIC FIELD-EFFECT TRANSISTOR; ORGANIC FIELD-EFFECT TRANSISTORS; PHOSPHONIC ACIDS;

DIELECTRIC MATERIALS; ELECTRON ENERGY LEVELS; FULLERENES; GATE DIELECTRICS; GATES (TRANSISTOR); LOGIC CIRCUITS; ORGANIC ACIDS; ORGANIC POLYMERS; SELF ASSEMBLED MONOLAYERS;

FIELD EFFECT TRANSISTORS;

EID: 71949116702     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2009.08.019     Document Type: Article

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