Stepped broken-gap heterobarrier tunneling field-effect transistor for ultralow power and high speed

IEEE Electron Device Letters

Volumn 32, Issue 6, 2011, Pages 743-745

  Register, Leonard F ^a   Hasan, Mohammad M ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Beyond complementary metaloxidesemiconductor (beyond CMOS); broken gap heterobarrier; tunneling field effect transistor (HetTFET)

Indexed keywords

BAND TO BAND TUNNELING; BEYOND COMPLEMENTARY METALOXIDESEMICONDUCTOR (BEYOND-CMOS); BROKEN-GAP HETEROBARRIER; DEVICE CHARACTERISTICS; DEVICE SIMULATIONS; HETEROBARRIERS; ON STATE CURRENT; PROTOTYPE DEVICES; TUNNEL BARRIER; TUNNELING FIELD-EFFECT TRANSISTOR (HETTFET); TUNNELING FIELD-EFFECT TRANSISTORS; ULTRA-LOW POWER;

CRYSTAL GROWTH; HETEROJUNCTIONS; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 79957617091     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2126038     Document Type: Article

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