Silicon nanocluster-sensitized emission from erbium: The role of stress in the formation of silicon nanoclusters

Journal of Applied Physics

Volumn 104, Issue 12, 2008, Pages

  Ahmad, I ^a   Temple, M P ^b   Kallis, A ^a   Wojdak, M ^a   Oton, C J ^b   Barbier, D ^c   Saleh, H ^a   Kenyon, A J ^a   Loh, W H ^b  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^c Teem Photonics   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ERBIUM; HYDROGEN; MULTILAYERS; NANOCLUSTERS; NONMETALS; PHASE SEPARATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON COMPOUNDS; SUGAR (SUCROSE); TENSILE STRENGTH; TENSILE STRESS;

AS DEPOSITED; ERBIUM-DOPED; FILM STRESSES; SILICON NANOCLUSTERS; SILICON OXIDE FILMS;

OXIDE FILMS;

EID: 58149234634     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3050324     Document Type: Article

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