Impact of the annealing temperature on the optical performances of Er-doped Si-rich silica systems

IOP Conference Series: Materials Science and Engineering

Volumn 6, Issue , 2009, Pages

  Cueff, S ^a   Labbe C ^a   Cardin, J ^a   Rizk, R ^a  

^a CNRS UMR 3299   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; AS-GROWN; DECAY LIFE-TIME; ER-DOPED; GROWTH PROCESS; NONRESONANT; OPTICAL PERFORMANCE; OPTIMUM TEMPERATURE; PL INTENSITY; SI-BASED; SI-RICH SILICON OXIDES; TIME-RESOLVED PHOTOLUMINESCENCE;

ANNEALING; OPTOELECTRONIC DEVICES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SILICA; SILICON; SILICON OXIDES;

ERBIUM;

EID: 84893438817     PISSN: 17578981     EISSN: 1757899X     Source Type: Conference Proceeding    
DOI: 10.1088/1757-899X/6/1/012021     Document Type: Conference Paper

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