Effect of hafnium addition on Zn-Sn-O thin film transistors fabricated by solution process

Applied Physics Letters

Volumn 100, Issue 2, 2012, Pages

  Young Choi, Jun ^a   Sig Kim, Sang ^a   Yeol Lee, Sang ^b  

^a Korea University   (South Korea)

^b Chongju University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD-EFFECT MOBILITIES; HAFNIUM ADDITION; SOLUTION PROCESS; SUBTHRESHOLD SWING; ZINC TIN OXIDE;

CARRIER CONCENTRATION; FIELD EFFECT TRANSISTORS; HAFNIUM; OXIDE FILMS; THIN FILM TRANSISTORS; THIN FILMS; TIN OXIDES; ZINC;

TIN;

EID: 84855971475     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3669700     Document Type: Article

References (20)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
2. T. Kamiya, K. Nomura, and H. Hosono, J. Disp. Technol. 5, 273 (2009). 10.1109/JDT.2009.2021582
3. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Science 300, 1269 (2003). 10.1126/science.1083212 (Pubitemid 36621429)
4. E. M. C. Fortunato, L. M. N. Pereira, P. M. C. Barquinha, A. M. Botelho do Rego, G. Gonalves, A. Vil, J. R. Morante, and R. F. P. Martins, Appl. Phys. Lett. 92, 222103 (2008). 10.1063/1.2937473
5. H. Q. Chiang, J. F. Wager, R. L. Hoffman, and C. H. Chang, Electrochem. Solid-State Lett. 10, H135 (2007). 10.1149/1.2666588 (Pubitemid 46439894)
6. B. N. Pal, B. M. Dhar, K. C. See, and H. E. Katz, Nature Mater. 8, 898 (2009). 10.1038/nmat2560
7. D. Kim, Y. Jeong, K. Song, S. K. Park, G. Z. Cao, and J. Moon, Langmuir 25, 11149 (2009). 10.1021/la901436p
8. D. Redinger and V. Subramanian, IEEE Trans. Electron Devices 54, 1301 (2007). 10.1109/TED.2007.895861 (Pubitemid 46864764)
9. R. L. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Lett. 82, 733 (2003); 10.1063/1.1542677
10. T. Arai, N. Morosawa, K. Tokunaga, Y. Terai, E. Fukumoto, T. Fujimori, T. Nakayama, T. Yamaguchi, and T. Sasaoka, SID Int. Symp. Digest Tech. Papers 41, 1033 (2010). 10.1889/1.3499825
11. R. L. Hoffman, B. J. Norris, and J. F. Wager, Appl. Phys. Lett. 82, 733 (2003). 10.1063/1.1542677
12. H. Lu, H. Ting, T. Shih, C. Chen, C. Chuang, and Y. Lin, SID Int. Symp. Digest Tech. Papers 41, 1136 (2010). 10.1889/1.3499858
13. M. J. Powell, Appl. Phys. Lett. 43, 597 (1983). 10.1063/1.94399
14. G. H. Kim, H. S. Shin, B. D. Ahn, K. H. Kim, W. J. Park, and H. J. Kim, J. Electrochem. Soc. 156 (1) H7-H9 (2009).
15. W. H. Jeong, G. H. Kim, H. S. Shin, B. D. Ahn, H. J. Kim, M.-K. Ryu, K.-B. Park, J.-B. Seon, and S. Y. Lee, Appl. Phys. Lett. 96, 093503 (2010). 10.1063/1.3340943
16. P.-C. Juan, C.-H. Liu, C.-L. Lin, S.-C. Ju, M.-G. Chen, I. Y.-K. Chang, and J.-H. Lu, Jpn. J. Appl. Phys. 48, 05DA02 (2009). 10.1143/JJAP.48.05DA02
17. H.-H. Hsieh, T. Kamiya, K. Nomura, H. Hosono, and C.-C. Wu, Appl. Phys. Lett. 92, 133503 (2008). 10.1063/1.2857463 (Pubitemid 351483707)
18. S. Jeong, Y-G. Ha, J. Moon, A. Facchetti, T. J. Marks, Adv. Mater. 22, 1346 (2010). 10.1002/adma.200902450
19. J. W. He, C. D. Bai, K. W. Xu, and N. S. Hu, Surf. Coat. Technol. 74, 387 (1995). 10.1016/0257-8972(95)08371-5
20. J. K. Jeong, J. H. Jeong, H. W. Yang, J. S. Park, Y. G. Mo, and H. D. Kim, Appl. Phys. Lett. 91, 113505 (2007). 10.1063/1.2783961 (Pubitemid 47416041)