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Volumn 520, Issue 6, 2012, Pages 2339-2342

Dry etching characteristics of TiN thin films in CF 4/BCl 3/N 2 plasma

(3) Joo, Young Hee a Woo, Jong Chang a Kim, Chang Il a

Author keywords

Boron trichloride; Carbon tetrafluoride; Etching; Inductively coupled plasma; Nitrogen; Scanning electron microscopy; Titanium nitride; X ray photoelectron spectroscopy

Indexed keywords

BORON TRICHLORIDE; CARBON TETRAFLUORIDE; DC BIAS VOLTAGE; DIRECT CURRENT; ETCH RATES; ETCHING CHARACTERISTICS; ETCHING MECHANISM; GAS MIXING RATIO; INDUCTIVELY-COUPLED; NON-VOLATILE; OPTIMIZED PROCESS; PLASMA SYSTEMS; PROCESS PRESSURE; RF-POWER; SUBSTRATE TEMPERATURE; TIN THIN FILMS;

BIAS VOLTAGE; BORON; BYPRODUCTS; CARBON FILMS; DC POWER TRANSMISSION; ETCHING; INDUCTIVELY COUPLED PLASMA; METALLIC FILMS; NITROGEN; NITROGEN PLASMA; PHOTONS; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; THIN FILMS; TINNING; TITANIUM; TITANIUM NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

DRY ETCHING;

EID: 84855970563 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.10.013 Document Type: Article

Times cited : (4)

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