Etching characteristics of Ta and TaN using Cl2/Ar inductively coupled plasma

Thin Solid Films

Volumn 506-507, Issue , 2006, Pages 230-234

  Shin, M H ^a   Na, S W ^a   Lee, N E ^a   Ahn, J H ^b  

^a Sungkyunkwan University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

Extreme ultraviolet lithography; Inductively coupled plasma; Plasma etching; Ta; TaN

Indexed keywords

ARGON; COUPLED CIRCUITS; ELECTRODES; INDUCTIVELY COUPLED PLASMA; PHOTORESISTS; PLASMA ETCHING; SILICA; SURFACES;

EXTREME ULTRAVIOLET LITHOGRAPHY; FLOW RATIO; MIXING RATIO; OES AND XPS MEASUREMENTS; RADICAL DENSITY;

TANTALUM COMPOUNDS;

EID: 33645220617     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.019     Document Type: Conference Paper

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