A- and B-site modified perovskite nanosheets and their integrations into high-κ dielectric thin films

International Journal of Applied Ceramic Technology

Volumn 9, Issue 1, 2012, Pages 29-36

  Osada, Minoru ^a,b   Sasaki, Takayoshi ^a,b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT CHARACTERISTIC; DIELECTRIC THIN FILMS; FIRST-PRINCIPLES CALCULATION; INTERFACIAL STRUCTURES; LANGMUIR-BLODGETT DEPOSITION; MULTILAYER NANO-FILMS; PERMITTIVITY VALUES;

CALCULATIONS; DEPOSITION; FILM PREPARATION; LEAKAGE CURRENTS; MULTILAYER FILMS; NANOSHEETS; PERMITTIVITY; PEROVSKITE; THIN FILM TRANSISTORS;

LANGMUIR BLODGETT FILMS;

EID: 84855938618     PISSN: 1546542X     EISSN: 17447402     Source Type: Journal    
DOI: 10.1111/j.1744-7402.2011.00713.x     Document Type: Article

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