High mobility titanium-doped In2o3 thin films prepared by sputtering/post-annealing technique

Applied Physics Express

Volumn 1, Issue 1, 2008, Pages

  Hashimoto, Ryota ^a   Abe, Yoshiyuki ^b   Nakada, Tokio ^a  

^a AOYAMA GAKUIN UNIVERSITY   (Japan)

^b SUMITOMO METAL MINING CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC PROPERTIES; ELECTRON MOBILITY; FILM PREPARATION; LIGHT TRANSMISSION; MAGNETRON SPUTTERING; SOLIDS; THICK FILMS; THIN FILM DEVICES; THIN FILMS; TITANIUM; VACUUM;

ANNEALING PROCESSES; ANNEALING TECHNIQUES; AT WAVELENGTHS; ELECTRICAL PROPERTIES; GLASS SUBSTRATES; HIGH MOBILITIES; OPTICAL TRANSMISSIONS; RF MAGNETRON SPUTTERING;

OPTICAL FILMS;

EID: 57049171960     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.015002     Document Type: Article

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